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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF282/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = -30 dBc * Specified Single-Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (CW) Power Gain = 11 dB Efficiency = 40% * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power * Gold Metallization for Improved Reliability MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
N-Channel Enhancement-Mode Lateral MOSFETs
MRF282S MRF282Z
10 W, 2000 MHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 458-03, STYLE 1 (MRF282S)
CASE 458A-01, STYLE 1 (MRF282Z)
Symbol VDSS VGS PD Tstg TJ
Value 65 20 60 0.34 - 65 to +150 200
Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.9 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 1.0 Vdc Adc Adc Symbol Min Typ Max Unit
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF (c) Motorola, Inc. 1997 DEVICE DATA
MRF282S MRF282Z 1
ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 Adc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 11 12.6 -- dB Ciss Coss Crss -- -- -- 15 8.0 0.45 -- -- -- pF pF pF VGS(th) VDS(on) gfs VGS(q) 2.0 -- 0.5 3.0 3.0 0.4 0.7 4.0 4.0 0.6 -- 5.0 Vdc Vdc S Vdc Symbol Min Typ Max Unit
30
34
--
%
IMD
--
-32.5
-30
dBc
IRL
10
14
--
dB
Gps
11
12.6
--
dB
--
30
--
%
IMD
--
-32.5
--
dBc
IRL
10
14
--
dB
Gps
11 40
12.3 45
-- --
dB %
No Degradation In Output Power
MRF282S MRF282Z 2
MOTOROLA RF DEVICE DATA
B4 B1 VGG + C1 R1 C3 R2 C5 R3 C9 C11 R4 B2 B3 C8 C10
B5
B6 VDD C17
+ C14 R5 C15 R6
L3 L2 RF INPUT C2 Z1 Z2 C4 Z3 C6 Z4 Z5 Z6 C12 L1 C7 DUT C13 L4 Z7 Z8 Z9 Z10 RF OUTPUT C16
B1, B2, B3, B4, B5, B6 C1, C17 C2, C4, C12 C3, C15 C5, C14 C6, C8, C10, C13 C7 C9, C11 C16 L1 L2 L3 L4
Ferrite Bead, Ferroxcube, 56-590-65-3B 470 F, Electrolytic Capacitor, Mallory 0.6-4.5 pF, Variable Capacitor, Johanson 0.1 F, Chip Capacitor, Kemet 1000 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 100 pF, B Case Chip Capacitor, ATC 0.4-2.5 pF, Variable Capacitor, Johanson Straight Wire, 21 AWG, 0.3 8 Turns, 0.042 ID, 24 AWG, Enamel 9 Turns, 0.046 ID, 26 AWG, Enamel 3 Turns, 0.048 ID, 25 AWG, Enamel
R1, R2, R3, R4, R5, R6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Board
12 , 0.2 W Chip Resistor, Rohm
0.155 x 0.08 Microstrip 0.280 x 0.08 Microstrip 0.855 x 0.08 Microstrip 0.483 x 0.08 Microstrip 0.200 x 0.330 Microstrip 0.220 x 0.330 Microstrip 0.490 x 0.330 Microstrip 0.510 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 35 Mils Glass Teflon(R), Arlon GX-300, r = 2.55 Input/Output Connectors Type N Flange Mount
Figure 1. Schematic of 1.93 - 2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z 3
R1
R2
R3
R4
R5
R6
+ VGG (BIAS) -
DC SUPPLY + + VDD -
+ C1
B1
C4
B2
C7
B3
C5
C8
C14
C11
B5 C10
B4 C13
B6
C16
RF INPUT
Z1
L1 Z2 C2
L2 Z3 Z4 C3 C6 Z5
L3 Z6
L4 DUT Z7 C9 C12 C15 Z8 Z9 Z10
L5 Z11 C17 RF OUTPUT
B1, B2, B3, B4, B5, B6 C1, C16 C2, C9, C12 C3 C4, C13 C5, C14 C6, C8, C11, C15 C7, C10 C17 L1 L2 L3, L4 L5
Ferrite Bead, Fair Rite, (2743021446) 470 F, 63 V, Electrolytic Capacitor, Mallory 0.6-4.5 pF, Variable Capacitor, Johanson Gigatrim 0.8-4.5 pF, Variable Capacitor, Johanson Gigatrim 0.1 F, Chip Capacitor 100 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 0.1 pF, B Case Chip Capacitor, ATC 3 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.053 Long, 6.0 nH 5 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.091 Long, 15 nH 9 Turns, 26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH 4 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.078 Long, 10 nH
R1, R2, R3, R4, R5, R6 W1, W2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board
12 , 1/8 W Fixed Film Chip Resistor, 0.08 x 0.13 Berrylium Copper, 0.010 x 0.110 x 0.210 0.122 x 0.08 Microstrip 0.650 x 0.08 Microstrip 0.160 x 0.08 Microstrip 0.030 x 0.08 Microstrip 0.045 x 0.08 Microstrip 0.291 x 0.08 Microstrip 0.483 x 0.330 Microstrip 0.414 x 0.330 Microstrip 0.392 x 0.08 Microstrip 0.070 x 0.08 Microstrip 1.110 x 0.08 Microstrip 1 = 0.03 Glass Teflon(R), Arlon GX-0300-55-22, 2 oz Copper, 3 x 5 Dimenson, 0.030, r = 2.55
Figure 2. Schematic of 1.81 - 1.88 GHz Broadband Test Circuit
MRF282S MRF282Z 4
MOTOROLA RF DEVICE DATA
VGG R1 R2 R3 R4 R6 Q1 Q2 R5
+ C1 VDD
B1 C13 C6 R8 C8 C9 C14
B2
B3 VDD
R7 C2 C4 C5
+
+ R9 C16 R10 C18 C20
L2
L1 RF INPUT Z1 C3 Z2 C7 Z3 C10 Z4
DUT
Z5
Z6
Z7 C17
Z8
Z9
RF OUTPUT
C15 C11 C12
C19
B1, B2, B3, C1, C20 C2 C3, C10, C15 C4, C16 C5 C6, C7, C9, C14, C17 C8, C13 C11, C12 C18 C19 L1 L2 Q1 Q2 R1
Ferrite Bead, Ferroxcube, 56-590-65-3B 470 F, 63 V, Electrolytic Capacitor, Mallory 0.01 F, B Case Chip Capacitor, ATC 0.6-4.5 pF, Variable Capacitor, Johanson 0.02 F, B Case Chip Capacitor, ATC 100 F, 50 V, Electrolytic Capacitor, Sprague 12 pF, B Case Chip Capacitor, ATC 51 pF, B Case Chip Capacitor, ATC 0.3 pF, B Case Chip Capacitor, ATC 0.1 F, Chip Capacitor, Kemet 0.4-2.5 pF, Variable Capacitor, Johanson 8 Turns, 0.042 ID, 24 AWG, Enamel 9 Turns, 0.046 ID, 26 AWG, Enamel NPN, 15 W, Bipolar Transistor, MJD310 PNP, 15 W, Bipolar Transistor, MJD320 200 , Axial, 1/4 W Resistor
R2 R3 R4, R6, R7 R5 R8, R9, R10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board Input/Output
1.0 k, 1/2 W Potentiometer 13 k, Axial, 1/4 W Resistor 390 , 1/8 W Chip Resistor, Rohm 1.0 , 10 W 1% Resistor, DALE 12 , 1/8 W Chip Resistor, Rohm 0.624 x 0.08 Microstrip 0.725 x 0.08 Microstrip 0.455 x 0.08 Microstrip 0.530 x 0.330 Microstrip 0.280 x 0.330 Microstrip 0.212 x 0.330 Microstrip 0.408 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 35 Mils Glass Teflon(R), Arlon GX-0300, r = 2.55 Type N Flange Mount RF55-22, Connectors, Omni Spectra
Figure 3. Schematic of Class A Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z 5
TYPICAL CHARACTERISTICS
16 14 Pout , OUTPUT POWER (WATTS) 12 10 8 6 4 2 0 0.0 VDD = 26 Vdc IDQ = 75 mA f = 2000 MHz Single Tone 0.25 0.75 0.5 Pin, INPUT POWER (WATTS) Gps 11 12 Pout 13 G ps , GAIN (dB) Pout , OUTPUT POWER (WATTS) 12 14 14 0.8 W
10
0.5 W
8 Pin = 0.2 W
6
10 1.0
4 1800
VDD = 26 Vdc IDQ = 75 mA Single Tone 1850 1900 f, FREQUENCY (MHz) 1950 2000
Figure 4. Output Power & Power Gain versus Input Power
Figure 5. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
G ps , GAIN (dB)
VDD = 26 Vdc I = 75 mA - 20 DQ f1 = 2000.0 MHz f2 = 2000.1 MHz - 30 - 40 3rd Order 5th Order 7th Order - 70 0.1 1.0 Pout, OUTPUT POWER (WATTS) PEP 10
12
Gps -20
11
-25
10 Pout = 10 W (PEP) IDQ = 75 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 IMD
-30
- 50 - 60
9
-35
8 16
-40 28
Figure 6. Intermodulation Distortion versus Output Power
Figure 7. Power Gain and Intermodulation Distortion versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dBc)
- 10 VDD = 26 Vdc f1 = 2000.0 MHz - 20 f2 = 2000.1 MHz 25 mA 50 mA - 40 100 mA IDQ = 125 mA - 50 75 mA - 60 0.1
14 IDQ = 125 mA G ps , POWER GAIN (dB) 13 100 mA
- 30
12 75 mA 50 mA 11 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 Pout, OUTPUT POWER (WATTS) PEP 10
10 25 mA 9 0.1
1.0 Pout, OUTPUT POWER (WATTS) PEP
10
Figure 8. Intermodulation Distortion versus Output Power
Figure 9. Power Gain versus Output Power
MRF282S MRF282Z 6
MOTOROLA RF DEVICE DATA
IMD, INTERMODULATION DISTORTION (dBc)
- 10
13
-15
2 Tflange = 75C
100
ID, DRAIN CURRENT (Adc)
C, CAPACITANCE (pF)
1.5
Ciss 10 Coss
Tflange = 100C 1
1.0 Crss
.5 TJ = 175C 0 0 4 8 12 16 20 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 24 28
0.1 0 4 12 20 24 8 16 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28
Figure 10. Class A DC Safe Operating Area
Figure 11. Capacitance versus Drain Source Voltage
60 50 Pout , OUTPUT POWER (dBm) 40 30 20 10 0 -10 - 20 - 30 - 40 10 20 30 Pin, INPUT POWER (dBm) 40 VDD = 26 Vdc ID = 600 mAdc f1 = 2000.0 MHz f2 = 2000.1 MHz 3rd Order G ps , GAIN (dB) FUNDAMENTAL TOI POINT
14
Pout = 10 W (PEP) VDD = 26 Vdc IDQ = 75 mA
39 Gps 38
13
12 11 VSWR 10 1930 1940 1950 1970 1960 1980 f, FREQUENCY MHz) 1990
37
COLLECTOR EFFICIENCY (%) INPUT VSWR 1.6:1 1.4:1 1.2:1
36
35 2000
Figure 12. Class A Third Order Intercept Point
Figure 13. Performance in Broadband Circuit
1.E+09 MTBF FACTOR (HOURS x AMPS 2 ) 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03
0
100 150 200 250 TJ, JUNCTION TEMPERATURE (C) This graph displays calculated MTBF in hours x ampere2 drain curent. Life tests at elevated temperature have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application.
50
Figure 14. MTBF Factor versus Junction Temperature
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z 7
+ j1
+ j0.5
+ j2
+ j3
+ j0.2
Zin 2 GHz
Zo = 5
+ j5
+ j10
f = 1.8 GHz
0.0 0.2 0.5
ZOL* 2 GHz
1 2 3 5
1.8 GHz
- j10
- j0.2
- j5
- j3
- j0.5
- j2
- j1
VCC = 26 V, ICQ = 75 mA, Pout = 10 W (PEP) f MHz 1800 1860 1900 1960 2000 Zin(1) 2.1 + j1.0 2.05 + j1.15 2.0 + j1.2 1.9 + j1.4 1.85 + j1.6 ZOL* 3.8 - j0.15 3.77 - j0.13 3.75 - j0.1 3.65 + j0.1 3.55 + j0.2
Zin(1)= Conjugate of fixture gate terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.
Figure 15. Series Equivalent Input and Output Impedence
MRF282S MRF282Z 8
MOTOROLA RF DEVICE DATA
Table 1. Common Source S-Parameters at VDS = 24 Vdc, ID = 600 mAdc f GHz GH
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
S11 |S11|
0.916 0.850 0.843 0.848 0.861 0.872 0.882 0.895 0.901 0.902 0.909 0.917 0.923 0.931 0.933 0.934 0.937 0.938 0.942 0.943 0.946 0.950 0.953 0.954 0.955 0.961
f
-81 -118 -135 -144 -151 -154 -158 -160 -163 -164 -166 -168 -169 -171 -172 -174 -175 -176 -177 -178 -178 -179 -180 179 178 177
S21 |S21|
33.41 20.81 14.45 10.61 8.34 6.61 5.43 4.54 3.82 3.27 2.83 2.48 2.18 1.94 1.73 1.55 1.40 1.27 1.16 1.06 0.98 0.92 0.86 0.80 0.76 0.71
f
128 101 84 73 63 55 47 41 34 29 24 19 14 10 6 2 -1 -4 -7 -10 -12 -15 -18 -21 -24 -26
S12 |S12|
0.016 0.020 0.020 0.019 0.017 0.015 0.013 0.011 0.009 0.008 0.006 0.006 0.006 0.006 0.005 0.007 0.009 0.010 0.011 0.014 0.016 0.019 0.019 0.020 0.020 0.024
f
41 16 2 -7 -15 -19 -23 -24 -24 -18 -6 10 14 15 43 60 60 63 71 73 71 67 63 62 65 69
S22 |S22|
0.498 0.499 0.532 0.552 0.609 0.647 0.675 0.728 0.740 0.773 0.794 0.813 0.826 0.842 0.853 0.859 0.869 0.869 0.874 0.876 0.884 0.897 0.903 0.907 0.907 0.912
f
-60 -88 -106 -117 -125 -132 -139 -145 -150 -160 -164 -168 -172 -176 -179 177 174 171 169 166 163 160 157 154 151 149
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z 9
PACKAGE DIMENSIONS
A
1
U 4 PL
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
W 4 PL
B
P
DIM A B C D E H J K N P U V W
V 4 PL
2
K 2 PL
D 2 PL
E C
INCHES MIN MAX 0.197 0.203 0.157 0.163 0.085 0.110 0.047 0.053 0.006 0.010 0.025 0.031 0.006 0.010 0.060 0.100 0.177 0.183 0.137 0.143 0.000 0.005 0.030 0.040 0.017 0.023
MILLIMETERS MIN MAX 5.00 5.16 3.99 4.14 2.16 2.79 1.19 1.35 0.15 0.25 0.64 0.79 0.15 0.25 1.52 2.54 4.50 4.65 3.48 3.63 0.00 0.13 0.76 1.02 0.43 0.58
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
H
J N
CASE 458-03 ISSUE C (MRF282S)
A U 4 PL
1
J S Y
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION -H- (PACKAGE COPLANARITY): THE BOTTOM OF THE LEADS AND REFERENCE PLANE -T- MUST BE COPLANAR WITHIN DIMENSION -H-.
W 4 PL
B
P
DIM A B C D E H J K N P S U V W Y
V 4 PL D 2 PL
2
K 2 PL
E
C
H
INCHES MIN MAX 0.197 0.203 0.157 0.163 0.085 0.110 0.047 0.053 0.006 0.010 0.000 0.004 0.006 0.010 0.050 0.080 0.177 0.183 0.137 0.143 0.020 0.040 0.000 0.005 0.030 0.040 0.017 0.023 0.030 0.040
MILLIMETERS MIN MAX 5.00 5.16 3.99 4.14 2.16 2.79 1.19 1.35 0.15 0.25 0.00 0.10 0.15 0.25 1.27 2.03 4.50 4.65 3.48 3.63 0.51 1.02 0.00 0.13 0.76 1.02 0.43 0.58 0.76 1.02
N
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 458A-01 ISSUE O (MRF282Z)
MRF282S MRF282Z 10
MOTOROLA RF DEVICE DATA
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MOTOROLA RF DEVICE DATA
MRF282/D MRF282S MRF282Z 11

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