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Preliminary Data
SIPMOS Small-Signal-Transistor Features * Dual N Channel
*
BSO 305N
Product Summary
Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 6
V A
Enhancement mode
RDS(on) 0.035
* Avalanche rated * Logic Level * dv/dt rated
Type BSO 305 N
Parameter Continuous drain current, one channel active
Package SO 8
Symbol
Ordering Code Q67041-S4028
Value 6 24 100 6 0.2 6 mJ A mJ kV/s Unit A
Maximum Ratings, at T j = 25 C, unless otherwise specified
ID IDpulse EAS IAR EAR
dv/dt
T C = 25 C, T A = 25 C Pulsed drain current, one channel active T C = 25 C
Avalanche energy, single pulse
I D = 6 A, VDD = 25 V, R GS = 25
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 6 A, V DS = 24 V, di/dt = 200 A/s, T jmax = 150 C
Gate source voltage Power dissipation, one channel active
VGS Ptot Tj Tstg
20 2 -55 ... +150 -55 ... +150 55/150/56
V W C
T C = 25 C
Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSO 305N
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 90 62.5 K/W Unit
RthJS Rth(JA) Rth(JA)
-
Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source breakdown voltage typ. 1.6 max. 2
Unit
V(BR)DSS VGS(th) IDSS
30 1.2
V
VGS = 0 V, I D = 0.25 mA, T j = 25 C
Gate threshold voltage, VGS = VDS I D = 30 A Zero gate voltage drain current
A 0.1 10 1 100 100 nA 0.033 0.023 0.05 0.035
VDS = 30 V, V GS = 0 V, T j = 25 C VDS = 30 V, V GS = 0 V, T j = 150 C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, I D = 5 A VGS = 10 V, I D = 6 A
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BSO 305N
Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 12 650 300 160 16 max. 815 375 200 24 ns S pF Unit
gfs Ciss Coss Crss td(on)
6 -
VDS2*I D*RDS(on)max , ID = 6 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1
Rise time
tr
-
50
75
ns
VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1
Turn-off delay time
td(off)
-
15
23
VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1
Fall time
tf
-
22
33
ns
VDD = 15 V, V GS = 4.5 V, ID = 5 A, RG = 9.1
Data Sheet
3
05.99
BSO 305N
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Values Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 0.9 16 25 3.2 max. 1.4 24 38
Unit
QG(th) Qg(5) Qg V(plateau)
-
nC
VDD = 24 V, ID = 0.1 A, VGS = 0 to 1 V
Gate charge at Vgs=5V VDD = 24 V, ID = 6 A , VGS = 0 to 5 V Gate charge total
nC V
VDD = 24 V, ID = 6 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 24 V, ID = 6 A
Reverse Diode Inverse diode continuous forward current
IS I SM VSD t rr Q rr
-
1.3 45 45
6 24 1.7 70 70
A
TA = 25 C
Inverse diode direct current,pulsed
TA = 25 C
Inverse diode forward voltage V ns C
VGS = 0 V, I F = 12 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/s
Reverse recovery charge
VR = 15 V, IF=l S , diF/dt = 100 A/s
Data Sheet
4
05.99
BSO 305N
Power dissipation
Drain current
Ptot= f (TA)
BSO 305 N
ID = f (TA )
BSO 305 N
2.6
W
6.5
A
2.2 2.0 1.8
5.5 5.0 4.5
Ptot
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120
C
ID
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120
C
160
160
TA
TA
Safe operating area
Transient thermal impedance
ID = f ( V DS )
parameter : D = 0 , TA = 25 C
10
A
2 BSO 305 N
ZthJA = f(tp )
parameter : D= tp/T
10 2
/ID =
BSO 305 N
VD
S
RD
10 1
o S(
n)
tp = 3.9s
K/W
10 s
1 ms
10
0 10 ms
Z thJA
100 s
10 1
ID
D = 0.50 0.20 10
0
0.10 single pulse 0.05 0.02 0.01
10 -1 DC
10 -2 -1 10
10
0
10
1
V
10
2
10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s
10
4
VDS
tp
Data Sheet
5
05.99
BSO 305N
Typ. output characteristics
Drain-source on-resistance
I D = f (VDS)
parameter: tp = 80 s
BSO 305 N
RDS(on) = f (Tj)
parameter : I D = 5 A, VGS = 4.5 V
BSO 305 N
15 A
Ptot = 2W
l jihf kg e
VGS [V] a 2.5
0.13
0.11 0.10
12 11 10
RDS(on)
b c d
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
0.09 0.08 0.07
ID
9 8 7 6 5 4 3 2 1
a c
de
f g h i j k l
98%
0.06 0.05 0.04 0.03 0.02 0.01
typ
b
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0.00 -60
-20
20
60
100
140
C
200
VDS
Tj
Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz
10 4
pF
C
10 3
Cis
Co Crs
10 2 0 5 10 15 20
V
30
VDS
Data Sheet
6
05.99
BSO 305N
Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max
12
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS , ID = 30 A
3.0 V
A
2.4
8
VGS(th)
2.2 2.0 1.8 1.6 1.4 1.2
max
ID
6 4
1.0 0.8
typ
2
0.6 0.4 0.2
min
0 0
1
2
3
V
5
0.0 -60
-20
20
60
100
V
160
VGS
Tj
Forward characteristics of reverse diode
I F = f (VSD)
parameter: Tj , tp = 80 s
10 2
BSO 305 N
A
10 1
IF
10 0
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Data Sheet
7
05.99
BSO 305N
Avalanche Energy EAS = f (Tj) parameter: ID = 6 A, VDD = 25 V RGS = 25
100
mJ
Typ. gate charge
VGS = f (Q Gate)
parameter: ID puls = 6 A
BSO 305 N
16
V
12
80 70
VGS
EAS
60 50 40 30
10
8 0,2 VDS max 0,8 VDS max
6
4 20 10 0 20 2
40
60
80
100
120
C
160
0 0
4
8
12
16
20
24
28
Drain-source breakdown voltage
Tj
nC 36 Q Gate
V(BR)DSS = f (Tj)
BSO 305 N
37
V
35
V(BR)DSS
34 33 32 31 30 29 28 27 -60
-20
20
60
100
C
180
Tj
Data Sheet
8
05.99

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