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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5 * Spice model available
ZVN4310A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Practical Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Practical Power Dissipation at T amb=25C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 100 0.9 1 12 20 850 1.13 -55 to +150 UNIT V A A A V mW W C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 9 0.36 0.48 600 0.5 0.65 100 1 3 20 10 100 TYP. MAX. UNIT CONDITIONS. V V nA A A A mS I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C(2) V DS=25 V, V GS=10V V GS=10V,I D=3A V GS=5V, I D=1.5A V DS=25V,I D=3A
g fs
3-393
ZVN4310A
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. C iss C oss TYP. MAX. 350 140 UNIT pF pF V DS=25 V, V GS=0V, f=1MHz CONDITIONS.
C rss t d(on) tr t d(off) tf
30 8 25 30 16
pF ns ns ns ns V DD 25V, V GEN=10V, I D=3A R GS=50
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W
Max Power Dissipation - (Watts)
1.0
Thermal Resistance (C/W)
150 t1
D.C.
D=t1/tP
0.75
100
tP
D=0.6
Am tt en bi
0.50
em pe tu ra
50
D=0.2 D=0.1
0.25
re
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-394
ZVN4310A
TYPICAL CHARACTERISTICS
RDS(on)-Drain Source On Resistance ()
VGS= 20V 10V 12V 9V 8V VGS=3V 10 4V 5V 6V 8V10V 7V
ID - Drain Current (Amps)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4
6V
1.0
5V
4V 3V 5 6 7 8 9 10
0.1 0.1
1
10
100
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Amps)
Saturation Characteristics
On-resistance v drain current
2.6
Normalised RDS(on) and VGS(th)
2.4
5
gfs-Transconductance (S)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0
sis Re e rc u So nai VGS=VDS Dr Gate ID=1mA Thres hold V oltage V
e nc ta
R
n) (o DS
VGS=10V ID=3.3A
4 3 2 1 0 0 2 4 6 8 10
VDS=10V
GS(TH )
25 50 75 100 125 150 175 200 225
12
14
16
18
20
Tj-Junction Temperature (C)
ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
Transconductance v drain current
16
VGS-Gate Source Voltage (Volts)
500
14 12 10 8 6 4 2 0 0 1
ID=3A
C-Capacitance (pF)
400 300 200 100 0 Coss Crss 50 Ciss
VDD= 10V 20V 50V 100V
0
10
20
30
40
2
3
4
5
6
7
8
9
10 11 12
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-395

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