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| 2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: iYfsi = 28 S (typ.) Low leakage current: IDSS = 100 A (VDS = 100 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC (Note 1) Drain current Drain power dissipation Pulse (Note 1) (Tc = 25C) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 30 45 180 125 468 45 12.5 150 -55~150 A W mJ A mJ C C Unit V V V JEDEC JEITA TOSHIBA SC-97 2-9F1B Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2 VDD = 25 V, Tch = 25C (initial), L = 373 mH, RG = 25 W, IAR = 45 A 1 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2 3 1 2002-08-29 2SK3442 Electrical Characteristics (Note 4) (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 80 V, VGS = 10 V, ID = 45 A Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton 10 V VGS 0V 4.7 W ID = 23 A VOUT RL = 2.2 W VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 23 A VDS = 10 V, ID = 23 A Min 3/4 3/4 100 2.0 3/4 14 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 15 28 4100 340 980 15 45 20 95 85 50 35 Max 10 100 3/4 4.0 20 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA mA V V mW S Duty < 1%, tw = 10 ms = VDD ~ 50 V - Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition 3/4 3/4 3/4 3/4 IDR = 45 A, VGS = 0 V IDR = 45 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 160 512 Max 45 180 1 4 -1.5 3/4 3/4 Unit A A A A V ns nC Note 5: IDR1, IDRP1: drain, flowing current value between the S2 pin, open the S1 pin IDR2, IDRP2: drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3442 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-29 2SK3442 ID - VDS 100 Common source Tc = 25C 80 Pulse test 15 10 200 8 7 160 10 ID - VDS 8 (A) ID ID (A) 7.5 60 Drain current 40 VGS = 6 V 20 Drain current 6.5 120 7 80 6.5 40 VGS = 6 V Common source Tc = 25C Pulse test 16 20 0 0 0.4 0.8 1.2 1.6 2.0 0 0 4 8 12 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 100 Common source 80 VDS = 10 V Pulse test 25 60 Tc = 100C 40 5 VDS - VGS Common source (V) 4 Tc = 25C Pulse test (A) ID VDS Drain-source voltage 3 2 11 1 23 ID = 45 A -55 0 0 Drain current 20 0 0 4 8 12 16 20 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 500 500 Common source VDS = 10 V 100 50 30 25 10 5 3 -55 Tc = 100C Pulse test 300 RDS (ON) - ID Common source Tc = 25C iYfsi (S) 300 Drain-source on resistance RDS (ON) (mW) 100 50 30 VGS = 10 V 10 5 3 15 Pulse test Forward transfer admittance 1 0.1 0.3 0.5 1 3 5 10 30 50 100 1 1 3 5 10 30 50 100 300 500 1000 Drain current ID (A) Drain current ID (A) 3 2002-08-29 2SK3442 RDS (ON) - Tc (mW) 50 Common source VGS = 10 V Pulse test 45 30 1000 Common source Tc = 25C 300 Pulse test 100 IDR - VDS RDS (ON) 40 Drain-source on resistance Drain reverse current IDR (A) 11 ID = 23 A 30 10 10 5 3 3 VGS = 0 V 20 10 0 -80 -40 0 40 80 120 160 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 50000 30000 6 Vth - Tc Common source Gate threshold voltage Vth (V) 5 VDS = 10 V ID = 1 mA Pulse test (pF) 10000 5000 Ciss 4 Capacitance C 3000 3 1000 500 Common source 300 VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 0.3 0.5 1 Coss Crss 2 1 3 5 10 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 100 Dynamic input/output characteristics Common source ID = 45 A Tc = 25C Pulse test 20 (W) (V) 160 80 16 PD VDS Drain power dissipation Drain-source voltage VDD = 80 V 40 VGS 20 4 40 8 80 40 10 0 40 80 120 160 200 0 0 40 80 120 160 0 200 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-08-29 Gate-source voltage 120 60 20 12 VGS (V) VDS 2SK3442 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 m Single pulse 100 m 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10 Pulse width tw (s) Safe operating area 1000 500 EAS - Tch 300 (mJ) 1 ms * ID max (pulsed) * 100 ms * 400 100 ID max (continuous) 30 Avalanche energy EAS 300 (A) Drain current ID 200 10 DC operation 100 3 0 25 1 * Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 50 75 100 125 150 175 Channel temperature (initial) Tch (C) VDSS max 100 300 1000 15 V 0V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 25 V, L = 373 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-08-29 2SK3442 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-29 |
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