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| HIP3TM Variable Attenuator 1.7-2.0 GHz AV112-12 Features Specified Attenuation: 17.5-25 dB Total Attenuation: 30 dB Typical Low Insertion Loss: < 1.5 dB Low Distortion: +40 dBm Typical Low Phase Shift and Delay SOI C-8 SOI C-8 Description The AV112-12 is a low distortion, PIN diode variable attenuator in a small SOIC-8 package. The design is based on Skyworks' unique series of HIP3TM components. The AV112-12 consists of a monolithic quadrature hybrid and a matched pair of PIN diodes designed for low distortion attenuators. Electrical Specifications at 25C Parameter Frequency Insertion Loss (0 mA Control Current) Attenuation @ 1.2 mA Control Current (1.85 GHz) SWR (All Ports) Input 3rd Order Intercept Point Relative Phase Shift Up to 20 dB Attenuation Group Delay +37 17.5 1.5 +40 7 0.6 10 0.9 Min. 1.7 1.0 Typ. Max. 2.0 1.5 25.0 1.8 dBm Deg. ns Unit GHz dB dB Operating Characteristics at 25C (0, +5 V) Parameter1 Switching Characteristics2 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru (Peak) Frequency Min. Typ. Max. 5 8 5 +15 Unit s s mV dBm Maximum Input Power for < 1 dB Attenuation Variation 1. All measurements made in a 50 system. 2. Driver Pulse -- 0-4 mA square wave. Skyworks Solutions, Inc. [781] 376-3000 * Fax [781] 376-3100 * Email sales@skyworksinc.com * www.skyworksinc.com Specifications subject to change without notice. 3/02A 1 HIP3TM Variable Attenuator 1.7-2.0 GHz AV112-12 Typical Performance Data 0 -5 -10 -5 2000 MHz 0 0 mA Loss (dB) Loss (dB) -15 -20 -25 -30 -35 -40 -45 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1850 MHz -10 -15 -20 0.5 mA 1.0 mA 2.0 mA 1700 MHz -25 1.70 1.75 1.80 1.85 1.90 1.95 2.00 Current (mA) Frequency (GHz) Attenuation vs. Control Current 0 -5 0 -5 Attenuation vs. Frequency Return Loss (dB) Return Loss (dB) -10 -15 -20 -25 -30 1850 MHz -35 2.0 GHz -40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1700 MHz -10 -15 2.0 GHz -20 -25 -30 -35 -40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1850 MHz 1700 MHz Current (mA) Current (mA) Input Return vs. Current Control Output Return vs. Current Control Absolute Maximum Ratings Characteristic RF Input Power Control Current Operating Temperature Storage Temperature Maximum Reverse Diode Voltage Electrostatic Discharge Value 0.5 W CW, 4 W @ 12.5% Duty Cycle 50 mA per Diode -65 to +125C -65 to +125C -100 V +125 V Pin Out CURRENT SOURCE 680 220 pF 100 nH CONTROL CURRENT GND 220 pF 100 nH CONTROL CURRENT GND 1 2 8 7 Note: Operating this device above any of these parameters may cause irreversible damage. 3 4 6 GND GND RF In RF Out 2 Skyworks Solutions, Inc. [781] 376-3000 * Fax [781] 376-3100 * Email sales@skyworksinc.com * www.skyworksinc.com Specifications subject to change without notice. 3/02A 5 HIP3TM Variable Attenuator 1.7-2.0 GHz AV112-12 Recommended Board Layout 0.1630 SOIC-8 PIN 8 0.050 (1.27 mm) BSC PIN 1 INDICATOR 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 0.068 (1.73 mm) MAX. 0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45 CHAMFER 0.0200 DIA. VIA 4 PLACES 0.197 (5.00 mm) 0.189 (4.80 mm) 0.0555 TYP. Material is 10 mil FR4. 0.0190 TYP. 0.010 (0.25 mm) 0.004 (0.10 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 8 MAX. Connection Diagram RF OUT CONTROL CURRENT RF IN CONTROL CURRENT Skyworks Solutions, Inc. [781] 376-3000 * Fax [781] 376-3100 * Email sales@skyworksinc.com * www.skyworksinc.com Specifications subject to change without notice. 3/02A 3 |
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