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| BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications * Complement to BD433, BD435 and BD437 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD434 : BD436 : BD438 VCES Collector-Emitter Voltage : BD434 : BD436 : BD438 Collector-Emitter Voltage : BD434 : BD436 : BD438 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature - 22 - 32 - 45 - 22 - 32 - 45 - 22 - 32 - 45 -5 -4 -7 -1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W C C Value Units VCEO VEBO IC ICP IB PC TJ TSTG (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD434/436/438 Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD434 : BD436 : BD438 Collector Cut-off Current : BD434 : BD436 : BD438 ICEO Collector Cut-off Current : BD434 : BD436 : BD438 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) * Collector-Emitter Saturation Voltage : BD434 : BD436 : BD438 * Base-Emitter ON Voltage : BD434 : BD436 : BD438 Current Gain Bandwidth Product VCE = - 5V, IC = - 10mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A 40 30 85 50 40 140 140 140 VCE = - 22V, VBE = 0 VCE = - 32V, VBE = 0 VCE = - 45V, VBE = 0 VEB = - 5V, IC = 0 - 100 - 100 - 100 -1 A A A mA Test Condition IC = - 100mA, IB = 0 Min. - 22 - 32 - 45 - 100 - 100 - 100 Typ. Max. Units V V V A A A ICBO VCB = - 22V, IE = 0 VCB = - 32V, IE = 0 VCB = - 45V, IE = 0 IC = - 2A, IB = - 0.2A - 0.2 - 0.2 - 0.2 - 0.5 - 0.5 - 0.6 - 1.1 - 1.1 - 1.2 V V V V V V MHz VBE(on) VCE = - 1V, IC = - 2A fT VCE = - 1V, IC = - 250mA 3 * Pulse Test: PW=300s, duty Cycle=1.5% Pulsed (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD434/436/438 Typical Characteristics 1000 -1 100 VCE(sat)[V], SATURATION VOLTAGE VCE = -1V IC = 10 IB hFE, DC CURRENT GAIN -0.1 10 1 -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -5.0 -4.5 -1000 VCE = -1V IC[A], COLLECTOR CURRENT -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -0.0 -0.0 CCBO(pF), COLLECTOR BASE CAPACITANCE -100 -10 -0.3 -0.5 -0.8 -1.0 -1.3 -1.5 -1.8 -2.0 -1 -0.1 -1 -10 -100 -1000 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance -10 IC MAX. (Pulsed) 10 1m ms s 10s 48 42 100s IC[A], COLLECTOR CURRENT IC Max. (Continuous) DC PC[W], POWER DISSIPATION -100 36 30 -1 24 18 12 -0.1 -1 BD434 BD436 BD438 -10 6 0 0 25 50 o 75 100 125 150 175 200 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD434/436/438 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H2 |
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