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| FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench(R) MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * * Features * Q1: N-Channel RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.040 @ VGS = 4.5V * Q2: P-Channel RDS(on) = 0.052 @ VGS = -10V RDS(on) = 0.080 @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25C unless otherwise noted Parameter Q1 30 (Note 1a) Q2 30 20 -5 -20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation 20 7 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C C/W C/W Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 Package Marking and Ordering Information Device Marking FDS8958 Device FDS8958 Reel Size 13" Tape width 12mm Quantity 2500 units (c)2004 Fairchild Semiconductor Corporation FDS8958 Rev A(W) FDS8958 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Test Conditions VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 All All 30 -30 25 -22 1 -1 100 -100 V mV/C A nA nA Off Characteristics Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V (Note 2) On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125C VGS = 4.5 V, ID = 6 A VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 1 -1 1.6 -1.7 -4.3 4 21 32 27 41 58 58 3 -3 V mV/C 28 42 40 52 78 80 m Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 -20 19 11 789 690 173 306 66 77 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz pF pF pF FDS8958 Rev A(W) FDS8958 Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 10 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -10 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6 6.7 10 9.7 18 19.8 5 12.3 16 14 2.5 2.2 2.1 1.9 12 13.4 18 19.4 29 35.6 12 22.2 26 23 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) 0.74 -0.76 1.3 -1.3 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78/W when mounted on a 2 0.5 in pad of 2 oz copper b) 125/W when mounted on a .02 in2 pad of 2 oz copper c) 135/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS8958 Rev A(W) FDS8958 Typical Characteristics: Q1 30 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 7.0V 4.0V 3.5V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 VGS = 3.0V ID, DRAIN CURRENT (A) 5.0V 20 4.5V 3.5V 4.0V 4.5V 5.0V 6.0V 7.0V 10V 3.0V 10 2.5V 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 6 12 18 24 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.09 RDS(ON), ON-RESISTANCE (OHM) 1.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7A VGS = 10V 1.6 ID = 7A 0.08 0.07 0.06 0.05 1.3 1.0 TA = 125 C 0.04 0.03 o 0.7 0.4 -50 TA = 25 C 0.02 o -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 30 25 ID, DRAIN CURRENT (A) 20 125oC 15 10 5 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55oC 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 10V VGS = 0V 10 TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 o 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958 Rev A(W) FDS8958 Typical Characteristics: Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID =7A 8 15V 6 CAPACITANCE (pF) VDS = 5V 10V 1200 f = 1MHz VGS = 0 V 900 CISS 600 4 300 2 COSS CRSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0.0 5.0 10.0 15.0 20.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 100s 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o 40 10 SINGLE PULSE RJA = 135C/W TA = 25C 30 1s 10s DC 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS8958 Rev A(W) FDS8958 Typical Characteristics: Q2 30 VGS = -10.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 25 -I D, DRAIN CURRENT (A) 20 15 10 5 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -3.5V -7.0V -5.0V -6.0V -4.0V 2.5 VGS = -3.5V 2 -4.0V -4.5V 1.5 -5.0V -6.0V -7.0V 1 -10.0V -3.0V 0.5 0 6 12 18 24 30 -ID, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5A VGS = -10V 1.4 ID = -5A 0.15 1.2 0.1 TA = 125 C 0.05 TA = 25 C 0 o o 1.0 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 30 TA = -55 C 25 -I D, DRAIN CURRENT (A) 20 15 125 C 10 5 0 1.5 2.5 3.5 4.5 5.5 -VGS, GATE TO SOURCE VOLTAGE (V) o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -10V o VGS = 0V 10 TA = 125 C 1 25 C 0.1 -55 C o o o 25 C o 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958 Rev A(W) FDS8958 Typical Characteristics: Q2 10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -5.3A 8 -15V 6 VDS = -5V -10V 1000 f = 1 MHz VGS = 0 V 800 CAPACITANCE (pF) CISS 600 4 400 COSS 2 200 CRSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 1s 1 DC 0.1 VGS = -10V SINGLE PULSE o RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) o Figure 18. Capacitance Characteristics. 50 1ms 100s 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 10s 20 10 0 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0. RJA(t) = r(t) + RJA 0.1 0.05 0.02 0.01 SINGLE PULSE 0.1 RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8958 Rev A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13 |
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