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| PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 MAY 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 3K at IC=1 Amp * Ptot=1 Watt APPLICATIONS * Lamp, solenoid and relay drivers ZTX704 ZTX705 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX704 -120 -100 E-Line TO92 Compatible ZTX705 -140 -120 -10 -4 -1 1 5.7 -55 to +200 UNIT V V V A A W mW/ C C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ZTX704 MIN. -120 -100 -10 -0.1 -10 ICES IEBO VCE(sat) VBE(sat) VBE(on) -10 -0.1 -1.3 -2.5 -1.8 -1.7 3-250 ZTX705 MAX. V V V A A A A A A UNIT CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-100V VCB=-120V VCB=-100V, Tamb=100C VCB=-120V, Tamb=100C VCES=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V* MAX. MIN. -140 -120 -10 -0.1 -10 -10 -0.1 -1.3 -2.5 -1.8 -1.7 Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage V V V V ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER SYMBOL hFE ZTX704 MIN. Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times 3K 3K 3K 2K MAX. MIN. 30K 3K 3K 3K 2K ZTX705 MAX. 30K IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-100mA, VCE=-10V f=20MHz VEB=-0.5V, f=1MHz VCE=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA UNIT CONDITIONS. fT Cibo Cobo ton toff 160 Typical 90 Typical 15 Typical 0.6 Typical 0.8 Typical 160 Typical MHz 90 Typical 15 Typical 0.6 Typical 0.8 Typical pF pF s s *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Maximum Power Dissipation (W) 1.0 R5 = 100K R5 = 1M 0.8 R5 = 0.6 0.4 0.2 0 1 10 DC Conditions R5 = 22K 100 VCE - Collector-Emitter Voltage (Volts) Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation T amb (max ) = Power(max ) - Power(act) 0.0057 +25 C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-251 ZTX704 ZTX705 TYPICAL CHARACTERISTICS -55C +25C +100C +175C IC/IB=1000 16k 14k 12k 1.8 1.6 +100C +25C -55C VCE=-5V VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 10 20 hFE - Gain 10k 8k 6k 4k 2k 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.8 1.6 -55C +25C +100C +175C 2.4 IC/IB=1000 2.2 2.0 -55C +25C +100C VCE=-5V VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 10 20 VBE - (Volts) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms ZTX704 ZTX705 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-252 |
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