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| DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. proprietary new fabrication technique. This achieved by direct nitride 2.90.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 -0.05 0.4 -0.05 0.4 -0.05 0.16 -0.06 +0.1 2.8 -0.3 +0.2 1.5 -0.1 2 3 4 5 0 to 0.1 5 +0.2 +0.1 +0.1 passivated base surface process (DNP process) which is an NEC +0.1 FEATURES * NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA * S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA 0.6 -0.05 +0.1 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 200 150 V V V mA mW 1.1-0.1 0.8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) +0.2 65 to +150 C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre 50 9 0.25 2 MIN. TYP. MAX. 1.0 1.0 250 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8V, IC = 20 mA A A GHz 0.8 pF dB dB 2.0 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IC = 7 mA, f = 1.0 GHz S21e MAG NF 13 15 17 1.2 hFE Classification Class Marking hFE R36/RCF * R36 50 to 100 R37/RCG * R37 80 to 160 R38/RCH * R38 125 to 250 * Old Specification / New Specification Document No. P10366EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan 1 5 5 (c) (1.9) 1987 2SC4094 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT-Total Power Dissipation-mW 2.0 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 GHz Free air Cre-Feed-back Capacitance-pF 200 1.0 0.7 0.5 100 0.3 0.2 0 50 100 150 0.1 TA-Ambient Temperature-C 1 2 3 5 7 10 20 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 8 V 20 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 8 V f = 1.0 GHz |S21e|2-Insertion Gain-dB 100 hFE-DC Current Gain 50 10 20 10 0.5 1 5 10 50 0 1 2 5 10 20 40 IC-Collector Current-mA IC-Collector Current-mA 30 20 fT-Gain Bandwidth Product-GHz GAIN BANDWIDTH PRODUT vs. COLLECTOR CURRENT VCE = 8 V |S21e|2-Insertion Gain -dB MAG-Maximum Available Gain-dB 30 MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY VCE = 8 V IC = 20 mA MAG 20 |S21e|2 10 7 5 3 2 10 0 0.1 1 2 3 5 7 10 20 30 IC-Collector Current-mA 0.2 0.5 f-Frequency-GHz 1.0 2.0 2 2SC4094 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 VCE = 8 V f = 1.0 GHz NF-Noise Figure-dB 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.774 0.631 0.523 0.460 0.426 0.416 0.417 0.430 0.443 0.458 S11 47.8 88.8 120.9 145.1 166.6 178.2 163.0 152.1 142.1 136.5 S21 12.689 9.952 7.813 5.966 4.841 4.065 3.413 3.035 2.659 2.482 S21 146.5 119.4 100.9 87.6 76.7 68.8 60.7 54.1 48.0 44.3 S12 0.031 0.048 0.058 0.067 0.074 0.083 0.087 0.098 0.105 0.114 S12 65.4 53.4 46.2 43.9 43.8 43.5 41.2 42.8 40.1 43.0 S22 0.882 0.723 0.611 0.564 0.515 0.488 0.459 0.443 0.428 0.414 S22 19.1 29.5 33.4 34.5 37.6 39.6 44.1 45.9 51.1 53.5 VCE = 8.0 V, IC = 20.0 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.461 0.364 0.338 0.330 0.334 0.344 0.359 0.383 0.401 0.419 S11 89.8 135.8 163.4 177.9 163.2 153.9 143.1 136.1 128.3 124.7 S21 23.331 13.501 9.535 7.083 5.604 4.722 3.982 3.517 3.094 2.882 S21 121.6 99.2 86.4 77.5 69.3 63.5 56.8 51.1 45.6 42.7 S12 0.021 0.033 0.046 0.056 0.070 0.084 0.091 0.104 0.116 0.127 S12 60.7 61.2 61.5 62.1 60.0 60.4 54.9 54.5 49.9 50.8 S22 0.665 0.511 0.448 0.430 0.402 0.385 0.362 0.350 0.337 0.323 S22 27.7 30.5 29.5 29.5 32.5 34.8 39.5 42.1 47.4 50.5 3 2SC4094 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz) 0.10 0.40 110 0.7 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C 5 0. 07 0. 3 4 0. 0 13 1.6 8 0.0 2 0.4 20 1 0.9 1.0 0.8 1.2 9 0.0 1 0.4 0.11 0.39 100 0.12 0.38 0.13 0.37 90 0.14 0.36 80 0.15 0.35 70 1.4 0.1 6 0.3 4 6 00 1.8 0.1 0.3 7 3 0. 2.0 0.2 50 0. 18 32 0.6 19 0. 31 0. ( -Z-+-J-XTANCE CO ) MPO N T EN 0.4 0 0.2 0 0.3 40 O WAVELEN G 0 1. IC = 20 mA 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 REACTANCE COMPONENT R ---- 0.2 ZO 0.1 0.4 S22e 10 2 GHz 0. 8 0.6 0.2 GHz 0.2 8 0.2 2 -20 0 0.2 1. IC = 5 mA 4.0 E NC TA X - AC -J -O RE --Z ) 0.3 0. 4 E IV AT 0. 5 0.6 0.7 0.8 1.4 0.9 1.2 1.0 S21e-FREQUENCY CONDITION VCE = 8 V IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90 120 0.2 GHz IC = 20 mA 60 S12e-FREQUENCY CONDITION VCE = 8 V IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90 120 60 150 S21e 30 150 IC = 5 mA IC = 5 mA 180 0 2GHz 4 0.2 GHz 8 12 16 20 0 180 0 0.04 0.08 0.12 0.16 0.2 0 -150 -30 -150 -120 -90 -60 -120 -90 4 0. 1.6 32 0. 18 0 -5 3 0.3 7 0.1 -6 1.8 2.0 4 0.3 6 0.1 0 0.35 0.15 -70 0.36 0.14 -80 0.37 0.13 0.4 IC = 5 mA -1 2 3. 0 0.2 GHz ( S12e 20 S11e IC = 20 mA 50 ( ) 5.0 1.0 0.8 0.8 0.6 0.6 0.4 0.2 0.2 -90 0.38 0.12 0.39 0.11 -100 0.40 0.10 -11 0 0.4 1 0.0 9 0.4 0.0 2 8 0 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 2 GHz 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 1.0 6.0 0.2 10 0.1 20 50 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 0 .29 0.2 1 0.3 -3 0.2 0 0 0 -4 0 0. 0. 31 19 IC = 20 mA 2GHz 30 -30 -60 2SC4094 [MEMO] 5 2SC4094 [MEMO] 6 2SC4094 [MEMO] 7 2SC4094 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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