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| ASB8000 SILICON BEAM LEAD PIN DIODE DESCRIPTION: The ASB8000 is a Silicon Beam Lead PIN Diode Designed for High Speed Switching Applications Up to 18 GHz. FEATURES INCLUDE: * Low Capacitance - 0.025 pF Typical * Low Series Resistance - 2.5 Typical * High Beam Pulls - 5 Grams Minimum PACKAGE STYLE BL1 MAXIMUM RATINGS IF VR PDISS TJ TSTG JA O O 100 mA 60 V 250 mW @ TA = 25 C -65 C to +175 C -65 C to +200 C 600 C/W O O O O NONE CHARACTERISTICS SYMBOL VBR CJ RS trr IR = 10 A VR = 10 V IF = 10 mA IF = 10 mA IF = 10 mA Lead Pull TC = 25 C O TEST CONDITIONS f = 2 - 18 GHz f = 1.0 GHz IR = 6.0 mA IR = 6.0 mA MINIMUM 60 TYPICAL 0.025 2.5 40 2.4 MAXIMUM 0.035 3.0 UNITS V pF nS nS gm 5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of ASB8000
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