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LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES * Small plastic SMD package * Low diode capacitance * Low diode forward resistance * Small inductance. APPLICATIONS * Low loss band-switching in VHF television tuners * Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD523).
2 1
BA 892
SOD523 SC-79
1 CATHODE
2 ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL I VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature T s =90C CONDITIONS MIN. - - - -65 -65 MAX. 35 100 715 +150 +150 UNIT V mA mW C C
ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR Cd reverse current diode capacitance CONDITIONS I F =10 mA V R =30 V f = 1 MHz; note 1; V R= 1 V V R= 3 V rD diode forward resistance f = 100 MHz; note 1; I F = 3 mA I F = 10 mA L
S
MIN - - - 0.6 - - -
TYP. - - 0.92 0.85 0.45 0.36 0.6
MAX. 1 20 1.4 1.1 0.7 0.5 -
UNIT V nA pF pF nH
series inductance
Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W
S22-1/2
LESHAN RADIO COMPANY, LTD.
BA 892
2
10
1.6
C d (pF)
1.2
r D( )
1 f = 1 MHz; T j =25C
0.8
0.4
0 0 10 20 30 10 -1 0.1
f = 100 MHz; T j =25C 1 10
V
R
(V)
I F (mA )
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
Fig.2 Diode forward resistance as a function of forward current; typical values.
S22-2/2

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