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| MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE CM600DU-24NF IC ................................................................... 600A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 1100.25 36 43.8 10 13.8 11.5 14.5 20.4 10 (15) 9 G2 (26) (26) (26) E2 Tc measured point (Base plate) 1100.25 LABEL 130 C2E 20 PPS E1 3-M8 NUTS 65 4-M4 NUTS G1 14.5 40 C1 E2 (15) Tc measured point (Base plate) 4-6.5MOUNTING HOLES E2 G2 24.5 +1.0 -0.5 35 +1.0 -0.5 C2E1 E2 C1 G1 E1 8 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC' = 111C*3 Pulse Pulse TC = 25C Conditions Ratings 1200 20 600 1200 600 1200 2080 -40 ~ +150 -40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W C C V N*m N*m N*m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 600A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 1.0, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 Limits Typ. -- 7 -- 1.95 2.15 -- -- -- 4000 -- -- -- -- -- 28 -- -- -- 0.019 -- -- Max. 1 8 0.5 2.65 -- 140 12 2.7 -- 800 180 900 350 300 -- 3.35 0.06 0.11 -- 0.023*3 10 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : Tc' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Mar.2003 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VGE = 20V 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 1000 800 600 400 4 15 13 Tj = 25C VGE = 15V 3 11 2 10 200 9 0 0 2 4 6 8 10 1 Tj = 25C Tj = 125C 0 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 10 Tj = 25C 8 EMITTER CURRENT IE (A) 103 7 5 3 2 6 4 IC = 600A IC = 1200A IC = 240A 102 7 5 3 2 2 Tj = 25C Tj = 125C 0 1 2 3 4 5 0 6 8 10 12 14 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 102 SWITCHING TIME (ns) Cies Conditions: VCC = 600V, VGE = 15V, RG = 1 Tj = 125C, Inductive load td(off) td(on) tf 103 7 5 3 2 101 Coes Cres 102 7 5 3 2 tr 100 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Irr trr Single Pulse TC = 25C 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V RG = 1 Tj = 25C Inductive load 23 5 7 103 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.06C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.11C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A 16 VCC = 400V VCC = 600V 12 8 4 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) Mar.2003 |
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