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| Bulletin I0210J 12/98 IR250SG12HCB PHASE CONTROL THYRISTORS Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 250 mils 4" 1200 V Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters V TM V RRM IGT V GT IH IL Maximum On-state Voltage Reverse Breakdown Voltage Max. Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current Units 1.3 V 1200 V 100 mA 2V 5 to 200 mA 400 mA Test Conditions T J = 25C, I T = 25 A T J = 25C, IRRM = 100 A (1) TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 250 x 250 mils (see drawing) 100 mm, with std. <110> flat 370 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR250SG12HCB Bulletin I0210J 12/98 Ordering Information Table Device Code IR 1 250 2 S 3 G 4 12 5 H 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: S = Solderable SCR Passivation Process: G = Glassivated MESA Voltage code: Code x 100 = VRRM Metallization: H = Silver (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in millimiters 2 www.irf.com IR250SG12HCB Bulletin I0210J 12/98 Wafer Layout TOP VIEW N 148 Basic Cells All dimensions are in millimiters www.irf.com 3 |
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