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| PD -91776 IRG4PH20K INSULATED GATE BIPOLAR TRANSISTOR Features * High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.0A n-channel Benefits * As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT * Latest generation 4 IGBT's offer highest power density motor controls possible TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 11 5.0 22 22 10 20 130 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6 (0.21) Max. 2.1 --- 40 --- Units C/W g (oz) www.irf.com 1 6/25/98 IRG4PH20K Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 -- Emitter-to-Collector Breakdown Voltage 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 1.13 -- 3.17 VCE(ON) Collector-to-Emitter Saturation Voltage -- 4.04 -- 2.84 VGE(th) Gate Threshold Voltage 3.5 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -10 gfe Forward Transconductance 2.3 3.5 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 2.5mA 4.3 IC = 5.0A VGE = 15V -- IC = 11A See Fig.2, 5 V -- IC = 5.0A , TJ = 150C 6.5 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 1mA -- S VCE = 100 V, IC = 5.0A 250 VGE = 0V, VCE = 1200V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 1200V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 28 43 IC = 5.0A 4.4 6.6 nC VCC = 400V See Fig.8 12 18 VGE = 15V 23 -- 26 -- TJ = 25C ns 93 140 IC =5.0A, VCC = 960V 270 400 VGE = 15V, RG = 50 0.45 -- Energy losses include "tail" 0.44 -- mJ See Fig. 9,10,14 0.89 1.2 -- -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 50 23 -- TJ = 150C, 28 -- IC = 5.0A, VCC = 960 ns 100 -- VGE = 15V, RG = 50 620 -- Energy losses include "tail" 1.7 -- mJ See Fig. 10,11,14 13 -- nH Measured 5mm from package 435 -- VGE = 0V 44 -- pF VCC = 30V See Fig. 7 8.3 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. VCC = 80%(VCES), VGE = 20V, L = 10H, RG =50, Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com IRG4PH20K 16 F or both: Triangular wave: Load Current ( A ) 12 Duty cycle: 50% TJ = 125 C T sink = 90 C Gate drive as specified Power Dissipation = 15W Clamp voltage: 80% of rated Sq uare wav e: 8 60% of rated voltage 4 Ideal diodes 0 0.1 1 10 ) 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) 10 TJ = 150 C I C , Collector-to-Emitter Current (A) 10 TJ = 150 C 1 TJ = 25 C TJ = 25 C V CC = 50V 5s PULSE WIDTH 6 8 10 12 14 0.1 1 V GE = 15V 20s PULSE WIDTH 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH20K 12 5.0 9 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) VGE = 15V 80 us PULSE WIDTH 4.0 IC = 10 A 6 3.0 IC = 5A 3 IC = 2.5 A 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature C) ( Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH20K 20 800 VGE , Gate-to-Emitter Voltage (V) VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc VCC = 400V I C = 11A 16 C, Capacitance (pF) 600 Cies 400 12 8 200 Coes Cres 4 0 1 10 100 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.95 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ 0.90 I C = 960V = 15V = 25 C = 11A 10 RG = 50Ohm VGE = 15V VCC = 960V IC = 10 A 0.85 IC = 1 5A IC = 2.5 A 0.80 0.75 0.70 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG R,GGate Resistance ( ) , Gate Resistance (Ohm) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH20K 5.0 Total Switching Losses (mJ) 3.0 I C , Collector Current (A) RG TJ VCC 4.0 VGE = 50Ohm = 150 C = 960V = 15V 100 VGE = 20V T J = 125 o C 10 2.0 1.0 SAFE OPERATING AREA 0.0 0 2 4 6 8 10 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PH20K L 50V 100 0V VC * D .U .T. RL = 0 - 960V 960V 4 X IC@25C 480F 960V * D river sam e type as D .U .T .; Vc = 80% of Vce(m ax) * N ote: D ue to the 50V pow er supply, pulse w idth and inductor w ill increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V D .U .T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 960V 90% 10% 90% VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d (o n ) tr E on E ts = (E o n +E o ff ) tf t=5s E o ff www.irf.com 7 IRG4PH20K Case Outline and Dimensions -- TO-247AC 3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 1 0) M D B M -A5.5 0 (.2 17) -D- 15 .90 (.62 6 ) 15 .30 (.60 2 ) -B- 5.3 0 (.20 9) 4.7 0 (.18 5) 2.5 0 (.0 89) 1.5 0 (.0 59) 4 N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 982 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -24 7A C . 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2X 5.5 0 (.2 17) 4.5 0 (.1 77) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE CO LLECT O R E M IT T E R CO LLECT O R * 1 4 .8 0 (.5 8 3) 1 4 .2 0 (.5 5 9) 4.3 0 (.1 70) 3.7 0 (.1 45) 0 .80 (.03 1 ) 0 .40 (.01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) * 3X C AS 2 .40 (.09 4 ) 2 .00 (.07 9 ) 2X 5.4 5 (.21 5) L O N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER 3X 1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M 2X 3 .40 (.13 3) 3 .00 (.11 8) CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P) D im en sio ns in M illim e ters a n d (Inche s) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice.6/98 8 www.irf.com |
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