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E2Q0028-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1312
electronic components KGF1312
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency and high output power. The KGF1312 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 31.5 dBm), and plastic package, the KGF1312 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as analog cellular phones.
FEATURES
* High output power: 31.5 dBm (min.) * High efficiency: 70% (typ.) * Low thermal resistance: 23C/W (typ.) * Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.50.1 1.6 +0.15 -0.10 1.50.1
2.50.1 10.2
40.2
0.48 +0.08 -0.05 0.4 +0.08 -0.05 1.50.1 1.50.1 30.1 0.4
+0.08 -0.05
0.390.05
Package material Lead frame material Pin treatment Solder plate thickness
Epoxy resin Cu Solder plating 5 mm or more
(Unit: mm)
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electronic components
KGF1312
MARKING
(1)
P0 XX
PRODUCT TYPE
(2) LOT NUMBER (NUMERICAL or ALPHABETICAL)
(3)
(1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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electronic components
KGF1312
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -6.0 -- -- -- -45 Max. 10 0.4 2.0 4.5 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = -6 V VGD = -16 V VDS = 10 V, VGS = -6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 4.0 mA (*1), PIN = 20 dBm (*1), PIN = 20 dBm (*1), PIN = 0 dBm Channel to case Unit mA mA mA A V dBm % dB C/W Min. -- -- -- 1.3 -3.0 31.5 60 -- -- Typ. -- -- -- -- -- 32.5 70 16.0 15 Max. 100 500 1500 -- -2.0 -- -- -- --
*1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 150 mA
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electronic components
KGF1312
RF CHARACTERISTICS
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electronic components Typical S Parameters
KGF1312
VDS = 5.8 V, VGS = -1.71 V, IDS = 150 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.924 0.922 0.921 0.919 0.917 0.916 0.914 0.913 0.909 0.909 0.907 0.903 0.898 0.896 0.894 0.889 0.889 0.881 0.880 0.875 0.869 0.868 0.863 0.860 0.857 0.855 -139.66 -147.41 -153.36 -158.06 -162.15 -165.42 -168.40 -171.17 -173.58 -175.84 -178.03 179.87 177.75 176.17 174.09 172.45 170.47 168.80 167.20 165.32 163.90 162.02 160.42 158.82 157.12 155.55 4.272 3.642 3.172 2.807 2.527 2.287 2.097 1.937 1.807 1.678 1.581 1.492 1.397 1.347 1.269 1.216 1.161 1.109 1.067 1.022 0.988 0.952 0.918 0.888 0.852 0.833 99.14 93.91 89.24 85.09 81.68 78.11 74.73 71.66 68.85 65.85 62.88 60.17 57.22 54.70 51.77 49.30 46.25 43.98 41.18 39.08 36.31 33.96 31.08 29.16 26.39 24.25 0.035 0.036 0.037 0.038 0.039 0.039 0.040 0.041 0.042 0.043 0.043 0.044 0.045 0.046 0.047 0.048 0.049 0.050 0.051 0.051 0.053 0.053 0.055 0.055 0.057 0.057 27.24 24.98 23.36 22.06 21.30 20.60 20.21 19.73 19.77 18.98 19.17 18.67 18.52 18.21 17.93 17.78 17.58 17.02 16.63 16.22 15.93 15.60 14.65 14.24 13.71 13.45 0.646 0.651 0.654 0.657 0.659 0.658 0.658 0.659 0.659 0.660 0.657 0.657 0.655 0.657 0.653 0.654 0.650 0.652 0.650 0.650 0.649 0.647 0.647 0.646 0.646 0.643 -176.25 -177.83 -178.86 179.87 179.20 178.10 177.39 176.24 175.50 174.67 173.68 172.96 171.87 171.11 170.24 169.18 168.49 167.27 166.58 165.39 164.21 163.41 162.14 161.38 160.14 159.01
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electronic components Typical S Parameters
KGF1312
VDS = 5.8 V, VGS = -1.71 V, IDS = 150 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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electronic components Test Circuit and Bias Configuration for KGF1312 at 850 MHz
KGF1312
VGS
CF
CB
CB
CF
VDS
RFC IN CC C1
T1
T2
(1) (2)
(3)
T3
T4
RFC OUT CC
C2
C3
C4
f = 850 MHz T1: Z0 = 50 W, E = 18.0 deg T2: Z0 = 50 W, E = 18.0 deg
T3: Z0 = 50 W, E = 18.0 deg T4: Z0 = 50 W, E = 9.0 deg
C1 = 3.0 pF, C2 = 8.0 pF, C3 = 1.0 pF, C4 = 4.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH
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