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MP04---590 MP04---590 Dual Thyristor, Thyristor/Diode Module Replaces April 2001 version, DS5371-2.2 DS5371-3.1 October 2001 FEATURES s s s s s s Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol 1800V 595A 16800A 3000V Code HBT Circuit APPLICATIONS s s s s HBP HBN Fig.1 Circuit diagrams Motor Control Controlled Rectifier Bridges Heater Control AC Phase Control VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 1800 1600 1400 Conditions MP04---590-18 MP04---590-16 MP04---590-14 Tvj = 0 to 125C, IDRM = IRRM = 50mA VDSM = VRSM = VDRM = VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Order As: MP04HBT590-18 or MP04HBT-16 or MP04HBT14 MP04HBP590-18 or MP04HBP-16 or MP04HBP14 MP04HBN590-18 or MP04HBN-16 or MP04HBN14 Module type code: MP04. For further information see Package Details. Fig. 2 Electrical connections - (not to scale) Note: When ordering, please use the whole part number. 1/10 www.dynexsemi.com MP04---590 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) Parameter Mean on-state current Test Conditions Half wave resistive load Tcase = 75C Tcase = 85C IT(RMS ITSM I2t ITSM I2t ITSM I2t ITSM I2t Visol RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Tcase = 75C 8.3ms half sine, Tj = 125C VR = 0 8.3ms half sine, Tj = 125C VR = 50% VDRM 10ms half sine, Tj = 125C VR = 0 10ms half sine, Tj = 125C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 595 505 935 16.8 1411 X 103 13.5 911 X 103 15.7 1232 X 103 12.6 794 X 103 3000 Units A A A kA A2s kA A2s kA A2s kA A2s V 2/10 www.dynexsemi.com MP04---590 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - junction to case (per thyristor or diode) dc Half wave 3 Phase Rth(c-hs) Thermal resistance - case to heatsink (per thyristor or diode) Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M10 Weight (nominal) Mounting torque = 5Nm with mounting compound Reverse (blocking) -40 125 130 C C Test Conditions Min. Max. 0.056 0.060 0.066 0.02 Units C/kW C/kW C/kW C/kW 6 (35) Nm (lb.ins) 12 (106) Nm (lb.ins) 1580 g DYNAMIC CHARACTERISTICS - THYRISTOR Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tj = 125C To 67% VDRM, Tj = 125C From 67% VDRM to 1500A, gate source 1.5A, tr = 0.5s, Tj = 125C VT(TO) rT Threshold voltage On-state slope resistance At Tvj = 125C. See note 1 At Tvj = 125C. See note 1 0.85 0.38 V m Min. Max. 50 1000 500 Units mA V/s A/s Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. 3/10 www.dynexsemi.com MP04---590 GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM , Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. 3.5 200 0.25 30 0.25 5 10 150 10 Units V mA V V V V A W W CURVES 2500 Measured under pulse conditions 40 1.6 35 1.4 Instantaneous on-state current, IT - (A) 2000 Peak half sine on-state current - (kA) 30 1.2 I2t value - (A2s x 106) 1500 25 1 20 0.8 1000 15 0.6 10 0.4 500 ITSM (VR = 0) Tj = 125C Min Tj = 125C Max 5 ITSM (VR = 50% VRRM) I2t (VR = 0) I2t (VR = 50% VRRM) 1 0.2 0 0.5 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) 2.5 0 0 2 3 5 6 7 4 8 Pulse length, half sine wave (ms) 9 10 Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Sub-cycle surge curves 4/10 www.dynexsemi.com MP04---590 18 16 100 Surge current (VR = 0) Surge current (VR = 50% VRRM) Peak half sine wave on-state current - (kA) 14 Gate trigger voltage, VGT - (V) Pulse width Frequency Hz Table gives pulse power PGM in Watts s 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10ms 20 - - 0W 10 W 50 W 20 W 10 5W 12 10 8 6 4 2 0 0 10 Up 1 lim per it 9 9% VGD L r li owe mit 99% 10 20 30 40 Number of cycles @ 50Hz 50 60 0.1 0.001 0.01 Tj = 125C 0.1 Tj = 25C Tj = -40C Region of certain triggering 1 10 IFGM Gate trigger current, IGT - (A) Fig. 5 Sub-cycle surge curves Fig. 6 Gate characteristics 0.06 2200 2000 Thermal resistance junction to case - (C/W) 0.05 1800 30 60 90 120 180 Power dissipation (Watts, per arm) 0.01 0.1 1 10 Time - (Seconds) 100 1000 1600 1400 1200 1000 800 600 400 200 0.04 0.03 0.02 0.01 0 0.001 0 0 200 400 600 800 1000 Sine wave current (Average, per arm) 1200 Fig. 7 Transient thermal impedance - dc Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz 5/10 www.dynexsemi.com MP04---590 2200 2000 1800 30 60 90 120 180 DC 100 90 30 60 90 120 180 Maximum permissble case temperature - (C) 400 600 800 1000 1200 1400 1600 80 70 60 50 40 30 20 10 0 100 Power dissipation (Watts, per arm) 1600 1400 1200 1000 800 600 400 200 0 0 200 200 Square wave current (Average, per arm) 300 400 500 600 700 800 900 1000 Sine wave current (Average, per arm) Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz Fig. 9 Maximum permissible casetemperature vs on-state current at specified conduction angles, sine wave 50/60Hz 100 90 Maximum permissible case temperature - (C) 7000 30 60 90 120 180 DC 90 80 70 Max permissible case temp. - (C) 6500 6000 80 70 60 50 40 30 20 10 0 100 200 300 400 500 600 700 800 Total power loss - (W) 5500 5000 4500 4000 3500 3000 2500 1000 60 50 40 30 20 Power resistive load Power inductive load 10 Temp resistive load Temp inductive load 0 1800 2000 2200 1000 1200 1400 1200 1400 1600 Square wave current (Average, per arm) dc output current - (A) Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible case temperature 6/10 www.dynexsemi.com MP04---590 9500 9000 8500 8000 Total power loss - (W) 90 80 Max permissible case temp. - (C) 7500 7000 6500 6000 5500 5000 4500 4000 3500 1300 70 60 50 40 30 20 Power resistive or inductive load 10 Temp resistive or inductive load 0 1900 2100 2300 2500 1500 1700 dc output current - (A) Fig. 12 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible case temperature 7/10 www.dynexsemi.com MP04---590 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1580g Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. Module outline type code: MP04 8/10 www.dynexsemi.com MP04---590 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32in) and a flatness within 0.05mm (0.002") are recommended. POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or `T' slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 9/10 www.dynexsemi.com MP04---590 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5371-3 Issue No. 3.1 October 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com |
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