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| ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT2222A max. AE 0.022 (0.55) 0.098 (2.5) E C MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g B Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation at TA=25C Derate above 25C Power Dissipation at TC=25C Derate above 25C Thermal Resistance, Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot 75 40 6.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150 Volts Volts Volts mA mW mW/C W mW/C C/W C/W C C Ptot RQJA RQJC Tj TS 2/22/99 MPS2222A ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 10 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 Collector-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector Cutoff Current at VEB = 3 V, VCE = 60 V Collector Cutoff Current at VCB = 60 V, IE = 0 at VCB = 50 V, IE = 0, TA=125C Emitter Cutoff Current at VEB = 3 V, IC = 0 Base Cutoff Current at VCE = 60 V, VEB = 3.0 V DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 10 mA, TA=-55C at VCE = 10 V, IC = 150 mA(1) at VCE = 1.0 V, IC = 150 mA(1) at VCE = 10 V, IC = 500 mA(1) Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz Current Gain-Bandwidth Product at VCE = 20 V, IC = 20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 kHz, IE=0 Input Capacitance at VEB = 0.5 V, f = 1 kHz, IC=0 NOTES (1) Pulse test: Pulse width 300ms - Duty cycle 2% V(BR)CBO V(BR)CEO V(BR)EBO 75 40 6.0 Volts Volts Volts VCEsat VCEsat VBEsat VBEsat ICEX ICBO 0.6 0.3 1.0 1.2 2.0 10 Volts Volts Volts Volts nA mA 0.01 10 IEBO IBL 100 20 nA nA hFE hFE hFE hFE hFE hFE hFE hie 35 50 75 35 100 50 40 2.0 0.25 300 8.0 1.25 8 10-4 4 10-4 8.0 25 kW hre fT COBO CIBO 300 MHz pF pF MPS2222A ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz at VCE = 10 V, IC = 10 mA, f = 1 kHz Collector Base Time Constant at IE = 20 mA, VCB = 20 V, f = 31.8 MHz Noise Figure at VCE = 10 V, IC = 100 mA, RS = 1 kW f = 1 kHZ Delay Time (see fig.1) at IB1 = 15 mA, IC = 150 mA, VCC=30V, VBE = -0.5V Rise Time (see fig.1) at IB1 = 15 mA, IC = 150 mA, VCC=30V, VBE = -0.5V Storage Time (see fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA, VCC=30V Fall Time (see fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA, VCC=30V hfe 50 75 300 375 mS hoe 5.0 25 35 200 150 rbCC ps NF 4.0 dB td 10 ns tr 25 ns ts 225 ns tf 60 ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME +30V 200W +16 V 0 -2 V < 2 ns 1kW C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +16 V 0 -14 V < 20 ns -4 V 1kW C S* < 10 pF FIGURE 2 - TURN-OFF TIME +30V 200W 1.0 to 100 ms, DUTY CYCLE A 2% 1.0 to 100 ms, DUTY CYCLE A 2% |
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