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| PTF 10120 120 Watts, 1.8-2.0 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability * * * * * Typical Output Power vs. Input Power 150 100 Output Power (Watts) 120 Output Power 90 Efficiency 60 80 Efficiency (%) 60 A-12 101 345 698 20 49 40 VDD = 28 V 30 IDQ = 1.2 A Total f = 1990 MHz 0 3 6 9 12 15 18 20 0 0 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 1.2 A Total, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB hD Y Min 10 120 -- -- Typ 11 -- 40 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10120 Electrical Characteristics Characteristic (per side) Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested--characteristics, conditions and limits shown per side) Min 65 -- 3.0 -- Typ -- -- -- 4.0 Max -- 5.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Maximum Ratings Parameter Drain-Source Voltage(1) Gate-Source Voltage(1) Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) (1) per side Symbol VDSS VGS TJ PD TSTG RqJC Value 65 20 200 440 2.51 -40 to +150 0.39 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Broadband Test Fixture Performance Output Power & Efficiency 12 Efficiency (%) @P-1dB 60 11 140 120 11 45 Gain (dB) 10 Gain (dB) 9 8 Efficiency (%) 7 1750 1850 1950 100 Gain (dB) VDD = 28 V IDQ = 1.2 A Total 10 60 40 20 2050 9 POUT = 120 W Return Loss (dB) 8 1930 1940 1950 1960 1970 1980 0 - 15 5 -10 -15 0 -20 1990 Frequency (MHz) Frequency (MHz) 2 Return Loss 80 Gain (dB) VDD = 28 V IDQ = 1.2 A Total 30 Efficiency 12 160 e Power Gain vs. Output Power 13 -15 12 PTF 10120 Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V Power Gain (dB) IDQ = 1200 mA IMD (dBc) 11 10 9 -25 -35 -45 -55 IDQ = 1.2 A Total f1 = 1959 MHz f2 = 1960 MHz IM3 IDQ = 600 mA IDQ = 300 mA VDD = 28 V f = 1990 MHz 10 100 1000 IM5 8 7 1 IM7 -65 0 20 40 60 80 100 120 140 Output Power (Watts) Output Power (Watts-PEP) Output Power vs. Supply Voltage 180 Capacitance vs. Supply Voltage (per side) * 240 30 Output Power (Watts) Cds and Cgs (pF) 160 140 120 100 80 22 24 26 28 30 32 34 200 160 VGS =0 V f = 1 MHz 25 20 15 120 80 40 0 0 10 20 30 40 Cds Crss IDQ = 1.2 A Total f = 1990 MHz 10 5 0 Supply Voltage (Volts) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Z Source D Impedance Data (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total) Z Load Z0 = 50 W G G S D Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R Z Source W jX -10.5 -13.0 -14.1 -15.2 -17.0 -17.5 -18.0 R 4.6 4.2 4.0 3.7 3.6 3.4 3.2 7.6 8.8 9.8 11.0 12.0 13.4 14.6 Z Load W jX -3.6 -3.2 -2.8 -2.8 -3.2 -3.8 -4.4 3 Crss Cgs PTF 10120 Test Circuit e Test Circuit Block Diagram for f = 2.0 GHz Q1 PTF 10120 .048 l @ 2.0 GHz .18 l @ 2.0 GHz .097 l @ 2.0 GHz .129 l @ 2 GHz .031 l @ 2 GHz .25 l @ 2 GHz LDMOS RF Transistor Microstrip 50 W Microstrip 31.7 W Microstrip 70 W Microstrip 9.35 W Microstrip 7.6 W Microstrip 8.8 W Microstrip 65 W L1, L2 L3, L4 R1, R2, R3, R4 R5, R6 R7, R8 R9, R10 T1, T2 Circuit Board 2.7 nh SMT Coil 4 mm SMT Ferrite Bead 220 W Chip Resistor K1206 2K SMT Potentiometer 10 W Chip Resistor K1206 1W Chip Resistor K1206 50 W Coaxial Balun .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper l1, l2 l3, l4 l5, l6 l7, l8 l9, l10 l11, l12 l13, l14 C1, C2, C3, C4, C5, C6, C11, C12 C7, C8, C15, C16 C9, C10, C13, C14 C17 10 pF Chip Cap ATC 100 B 0.1 mF Chip Cap K1206 10 mF SMT Tantalum Cap 0.7 pF Chip Cap ATC 100 B 4 e PTF 10120 Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10120 Uen Rev. A 01-06-99 5 e Notes: 6 |
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