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| SI6968ADQ New Product Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V ID (A) "6.2 "5.3 D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D S2 S2 G2 G1 G2 SI6968ADQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 "6.2 "5.3 "30 1.5 1.5 0.96 Steady State Unit V "5.1 "3.4 A 1.0 1.0 0.64 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71111 S-99586--Rev. A, 20-Dec-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 72 100 55 Maximum 83 120 70 Unit _C/W 2-1 SI6968ADQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.2 A VGS = 2.5 V, ID = 5.3 A VDS = 10 V, ID = 6.2 A IS = 6.2 A, VGS = 0 V 30 0.014 0.018 0.018 0.024 25 0.89 1.2 0.022 0.030 S V 0.6 "100 1 15 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 6.2 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4 5 V RG = 6 W A 4.5 V, VDS = 10 V, VGS = 4 5 V ID = 6.2 A V 4.5 V, 62 13.5 2 3.7 18 25 50 25 40 30 50 100 50 70 ns 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 2V 12 18 12 TC = 125_C 6 25_C 0 6 1.5 V 0 0 2 4 6 8 10 -55_C 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71111 S-99586--Rev. A, 20-Dec-99 SI6968ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance 0.05 C - Capacitance (pF) 2000 Ciss 1500 0.04 0.03 VGS = 2.5 V VGS = 4.5 V 1000 0.02 0.01 500 Crss Coss 0 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.2 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.2 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 6 9 12 15 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.060 0.075 On-Resistance vs. Gate-to-Source Voltage 0.045 ID = 6.2 A 0.030 TJ = 25_C 0.015 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 71111 S-99586--Rev. A, 20-Dec-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI6968ADQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 25 0.2 V GS(th) Variance (V) ID = 250 mA 20 -0.0 Power (W) Single Pulse Power, Junction-to-Ambient 15 -0.2 10 -0.4 5 -0.6 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71111 S-99586--Rev. A, 20-Dec-99 |
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