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| polyfet rf devices SR341 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300.0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 500 Watts Junction to Case Thermal Resistance o 0.30 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Voltage 125 V Gate to Source Voltage 20 V 25.0 A RF CHARACTERISTICS ( 300.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 16 65 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.80 A, Vds = 50.0 V, F = Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz 175 MHz VSWR Relative Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 5.5 0.30 35.00 400.0 15.0 200.0 MIN 125 5.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 40.00 mA, Vgs = 0V Vds = 50.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 6.00 A Vgs = 20V, Vds = 10V Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/10/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SR341 POUT VS PIN GRAPH SR341 Pin vs Pout Freq=175Mhz; Idq=1A; Vds=50V 500 450 400 350 300 250 200 150 100 50 0 0 5 10 Pin in Watts 15 20 13 10 0 10 CAPACITANCE VS VOLTAGE 19 1000 S3E 1 DIE CAPACITANCE Ciss 18 Efficiency = 55% Pout 17 Coss 16 100 Gain 15 1dB compression = 300W 14 Crss VDS IN VOLTS 20 30 40 50 IV CURVE S3E 1 DIE IV 35 30 25 ID IN AMPS 20 15 10 5 0 0 vg=2v 2 4 Vg=4v 6 8 10 12 14 VDS IN VOLTS Vg=6v vg=8v 16 0 18 20 vg=12v ID & GM VS VGS 100.00 S3E 1 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 10.00 1.00 gM 0.10 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/10/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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