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Bulletin I25187 rev. B 04/00
ST333C..L SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
620A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I T(AV) @ Ths I T(RMS) @ Ths I TSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM t q range TJ
ST333C..L
620 55 1230 25 11000 11500 605 553 400 to 800 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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ST333C..L Series
Bulletin I25187 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
04 ST333C..L 08 800 900 400
VRSM , maximum non-repetitive peak voltage V
500
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1430 1670 1080 530 50 VDRM 50 40
ITM 180 el 1250 1170 880 400 50 50 55 2340 2310 2090 1190 50 VDRM 40
o
ITM 100s 1940 2010 1800 990 50 55 6310 3440 2040 990 50 VDRM 40
ITM
Units
5620 5030 1750 800 50 55
A
V A/s C
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST333C..L
620 (305) 55 (75) 1230 11000 11500 9250 9700
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2 t for fusing
605 553 428 391 KA2 s
t = 10ms t = 8.3ms
I 2 t
Maximum I2 t for fusing
6050
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST333C..L Series
Bulletin I25187 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r
t1
ST333C..L Units
1.96 0.91 0.93 0.58 m 0.58 600 1000 mA V
Conditions
ITM= 1810A, T J = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold
Low level value of forward slope resistance
r t2 IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST333C..L Units
1000 1.1 Min 10 Max 30 s A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time Max. turn-off time
tq
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST333C..L
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST333C..L Units
60 10 10 20 V W A
Conditions
T J = TJ max., f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
T J = TJ max, tp 5ms
5 200 3 20 0.25 mA T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST333C..L Series
Bulletin I25187 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST333C..L
-40 to 125 -40 to 150 0.11 0.05 0.011 0.005 9800 (1000)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
250
TO - 200AC (B-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.012 0.014 0.018 0.026 0.045 0.010 0.015 0.018 0.027 0.046
Rectangular conduction
Single Side Double Side 0.008 0.014 0.019 0.027 0.046 0.008 0.014 0.019 0.028 0.046
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
33
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available
50 DN DM DL DP DK --100 EN EM EL EP EK --200 -FM * FL * FP FK FJ -400 --HL HP HK HJ HH dv/dt (V/s) 20 8 - tq code 10 CN 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 12 CM 15 CL 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) t q(s) 18 CP 20 CK 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 25 -3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 30 --
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
4
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ST333C..L Series
Bulletin I25187 rev. B 04/00
Outline Table
0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 2 7 (1 . 0 6 ) M A X .
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20 5 5 8 .5 (2 .3 ) D I A . M AX . 4.7 (0.18)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
Maximum Allowable Heatsin k Tem perature (C)
M a xim u m A llo w a ble H e a tsin k T e m p e r a tu re ( C )
130 120 110 100 90 80 70 60 50 40 30 0 100 30
ST333C..L Series (Single Side Cooled ) R th J-hs (DC) = 0.11 K/W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 30
ST 3 3 3 C ..L Se rie s (Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 1 K / W
Co n duc tio n An g le
Co nd uc tio n P eriod
60 90 120 180
9 0 60 120 1 80 DC
200
300
400
500
10 0 20 0 30 0 40 0 5 0 0 6 0 0 7 00 8 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
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ST333C..L Series
Bulletin I25187 rev. B 04/00
M a x im u m A llo w a b le H e a tsin k T e m p e rat u re (C ) 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 1 00 20 0 3 0 0 4 0 0 5 00 6 0 0 70 0 8 00 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Co nd uctio n A ng le
M a x im u m A llo w a b le H e a tsin k T e m p e ra t ure ( C )
ST 3 3 3 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ- hs (D C ) = 0 .0 5 K /W
130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 30 60
ST 3 3 3 C ..L S e rie s (D o u b le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 5 K / W
C o ndu c tio n Pe rio d
3 0
60
90
90 12 0 1 80 DC 600 8 00 10 0 0 1 20 0 1 4 00
1 20 180
A v e ra g e O n -st a t e C urre n t ( A )
Fig. 4 - Current Ratings Characteristics
Maximum Average On -state Power Loss (W )
M a x im um A v e ra ge O n -st a t e P o w e r Lo ss (W )
2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 Average O n-state Current (A)
Fig. 5 - On-state Power Loss Characteristics
Co n duc tio n An g le
28 0 0 24 0 0 20 0 0 16 0 0 12 0 0 800 400 0 0 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 1 4 00 1 60 0 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 6 - On-state Power Loss Characteristics
C o nduc tio n Pe rio d
180 120 90 60 30
RMS Lim it
DC 180 120 90 60 30
R M S Lim it
ST333C..L Series T J = 125C
ST 3 3 3 C ..L Se rie s T J = 1 2 5 C
Peak Half Sine W ave O n-state Current (A)
9500 9000 8500 8000 7500 7000 6500 6000 5500 5000 4500 1
At An y Rated Load Condition And W ith Rated V RRM App lied Follow ing Surge. Initial T J = 125C @ 60 H z 0.0083 s @ 50 H z 0.0100 s
P e a k H a lf S in e W a v e O n -st a te C u rre n t (A )
10000
12000 11000
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P ulse T ra in D u ra t io n . C o n t ro l O f C o n d u c t io n M a y N o t B e M a in ta in e d . In it ia l T J = 1 2 5 C 10000 N o V o lt a g e R e a p p lie d Ra t e d V RRM R e a p p lie d 9000 8000 7000 6000 5000 ST 3 3 3 C ..L Se rie s 0.1 P u lse Tr a in D u ra t io n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
ST333C..L Series 10 100
4000 0.01
1
N um b er O f E qu al Am plitud e Half Cy c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST333C..L Series
Bulletin I25187 rev. B 04/00
T ra n sie n t T h e rm a l Im p e d a n c e Z th J- hs (K / W ) 10000 Instanta neous On-state Current (A) 1
St e a d y St a t e V a lu e R thJ-hs = 0 .1 1 K / W (Sin g le Sid e C o o le d ) R th J- hs = 0 .0 5 K / W 0 .1 (D o ub le Sid e C o o le d ) (D C O p e ra tio n )
1000 T J = 25C T J = 125C
0 .0 1 S T 3 3 3 C ..L Se rie s 0 .0 0 1 0 .0 0 1
ST333C..L Series 100 0 1 2 3 4 5 6 7 Instan ta neous On -state V oltage (V )
Fig. 9 - On-state Voltage Drop Characteristics
0. 01
0. 1
1
10
S q u a re W a v e P u lse D ur at io n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximum Reverse Recovery Charge - Qrr (C)
M a x im um R e v e rse R e c o v e ry C u rre n t - Ir r (A )
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 ST333C..L Series TJ = 125 C
I T M = 10 00 A 50 0 A 30 0 A 20 0 A 10 0 A
1 80 1 60 1 40 1 20 1 00 80 60 40 20 10 20 30 40 50 60 70 80 90 1 00 R a t e O f F a ll O f Fo rw a rd C u rre n t - d i/d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
I TM = 10 00 A 50 0 A 30 0 A 2 00 A 1 00 A
S T 3 3 3 C ..L S e rie s T J = 1 2 5 C
70
80
90 100
Rate O f Fall O f O n-sta te Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
1E4
P e a k O n -st a t e C u rre n t (A )
1 00 0 50 0 1 50 0 2 50 0
40 0 20 0 1 00
50 H z 1 00 0 1 50 0 25 00 30 00 5 00 0
500 40 0 20 0
100
5 0 Hz
1E3
5 0 00
30 00
Snubb er c ircuit R s = 1 0 o hm s C s = 0. 47 F V D = 80 % V D RM
Snub ber c ircu it R s = 10 ohm s C s = 0 .47 F V D = 80 % V DR M ST33 3C ..L Se ries Sin uso idal pulse T C = 55C
tp
ST3 33C ..L Se ries Sinuso idal pulse TC = 40 C
tp
1E2 1E1
1E2
1E3
1 E14E 4 1 E 1 1 1E
1 E2
1 E3
1E4
P u lse B a se w id th ( s)
Fig. 13 - Frequency Characteristics
P u lse Ba se w id t h ( s)
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ST333C..L Series
Bulletin I25187 rev. B 04/00
1E4
Snub ber c irc uit R s = 10 o hm s C s = 0 .47 F V D = 80 % V D RM 5 00 40 0 20 0 100 50 Hz 100 0 1 50 0 20 00 25 00 ST3 33C ..L Se ries Trape zoidal pulse T C = 40C d i/dt = 5 0A /s 3 000 5 00 0 tp ST33 3C ..L Series Tra pezo ida l pu lse T C = 5 5C di/dt = 50 A/s 5 00 Snub ber circuit R s = 10 o hm s C s = 0.4 7 F V D = 80% V D RM 40 0 20 0 1 00 50 Hz
P e a k O n -st a t e C urre n t ( A )
1 000
1E3
15 00 20 00 25 00 3 00 0
5 000
tp
1E2 1E1
1 E2
1 E3
1E 1 E14E 41 E 1 1
1E 2
1E3
1E4
P u lse B ase w id t h ( s)
P ulse Ba se w id th ( s)
Fig. 14 - Frequency Characteristics
1E 4
Snub be r c irc uit R s = 10 oh m s C s = 0 .47 F V D = 80 % V D RM 40 0 200 1 00 50 Hz 10 00 1 50 0 2 00 0 ST33 3C .. L Serie s Trap ezo id al pulse T C = 4 0C di/d t = 10 0A/s 2 50 0 3 000 500 0 tp ST33 3C ..L Se ries Tra pezo idal p ulse T C = 5 5C di/dt = 1 00A /s 50 0 40 0 Snubb er circuit R s = 1 0 ohm s C s = 0.4 7 F V D = 80% V D RM 2 00 10 0 5 0 Hz
Pe a k O n -sta t e C u rre n t (A )
1E 3
20 00 2 500 300 0 50 00
10 00 15 00
5 00
tp
1E 2 1 E1
1E2
1E3
1E 1E 1 E 4 41 E 1 1
1E2
1 E3
1E4
P ulse B a se w id t h ( s)
P ulse Ba se w id th ( s)
Fig. 15 - Frequency Characteristics
1E5
ST333 C. .L Series Re ctan gular pu lse di/d t = 5 0A/s 20 jo ule s per pu lse
Pe a k O n -st a te C u rre n t (A )
tp
1E4
2 3 5 10
2 0 jo ule s per p ulse 35 10
1
1E3
0.3 0 .2
0. 5 0 .5 0.3 0 .2
2 1
1E2
tp ST3 33C ..L Serie s Sinusoidal pulse
1E1 1E1
1 E2
1 E3
1 E14E 41 E 1 1 1E
1 E2
1E3
1E4
P u lse Ba se w id t h ( s)
P u lse B ase w id t h ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST333C..L Series
Bulletin I25187 rev. B 04/00
100 Instantaneous Gate Voltage (V)
10
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2) (3) (4)
Device: ST333C..L Series Frequency Limited by PG(AV) 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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