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| TCPT1200X01 Subminiature Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector is located face to face on the same optical axes. The operating wavelength is 950 nm. Features D Gap 2 mm D Package height: 4 mm D Parts shipped taped and reeled 2000 pcs/ reel Application D Accurate position sensor for steering wheel D Detection for motion direction D Detection of motor speed and direction where high reliability performance is required D Soldering method according to CECC00802 table 1, class B or C D Surface Mountable Technology (SMD) D Option X01: High rel. device advanced applications Pin Connection A Coll Cath 13895 E Figure 1. Rev. A1, 23-Sep-98 1 (9) AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A Output (Detector) Input (Emitter) Coupler Parameters Collector emitter voltage Emitter collector voltage Collector current Power dissipation Tamb 25C tp = 0.1 ms; tp / T = 0.01 Tamb 25C Test Conditions Symbol VCE0 VEC0 IC Pv Symbol VR IF IFP Pv Value 70 7 20 75 Value 5 25 100 75 Unit V V mA mW Unit V mA mA mW Parameters Total power dissipation Ambient temperature range Storage temperature range Soldering temperature t5s Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 150 - 40 to+ 85 - 40 to + 100 230 Unit mW C C C Absolute Maximum Ratings TCPT1200X01 2 (9) Parameters Reverse voltage Forward current Pulse forward current Power dissipation Test Conditions Rev. A1, 23-Sep-98 TCPT1200X01 Electrical Characteristics Tamb = 25C Input (Emitter) P tot - Total Power Dissipation ( mW ) AAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A AAAA AAAA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A mA pF 50 Parameters Forward voltage Reverse current Junction capacitance Test Conditions IF = 15 mA VR = 5 V VR = 0 V, f = 1 MHz Symbol VF IR Cj Min. Typ. 1.2 Max. 1.5 10 Unit V Output (Detector) AAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A AAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA A A A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAA AAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A 10 100 Parameters Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 25 V, IF = 0, E=0 Symbol VCE0 VEC0 ICE0 Min. 70 7 Typ. Max. Unit V V nA Coupler AAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A Collector/emitter saturation voltage IF = 15 mA, IC = 0.05 mA VCEsat 0.4 V Parameters Collector current Test Conditions VCE = 5 V, IF = 15 mA Symbol IC Min. 300 Typ. 500 Max. Unit mA Derating Diagram 200 Sensor 150 100 50 Emitter / Detector 0 0 25 50 75 100 13664 Tamb - Ambient Temperature ( C ) Figure 2. Rev. A1, 23-Sep-98 3 (9) TCPT1200X01 Application Example IF=15 mA +VC=5 V 74HCT14 10 k GND GND Figure 3. VE UQ 13887 Typical Characteristics (Tamb = 25C, unless otherwise specified) 1000.0 V CEsat - Collector Emitter Saturation Voltage ( V ) 0.180 0.160 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0 -40 -20 0 20 40 60 80 100 IF=15mA IC=50mA I F - Forward Current ( mA ) 100.0 10.0 1.0 0.1 0 13660 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 13662 Tamb - Ambient Temperature ( C ) Figure 4. Forward Current vs. Forward Voltage Figure 5. Collector Em. Sat. Voltage vs. Ambient Temperature 4 (9) Rev. A1, 23-Sep-98 TCPT1200X01 Typical Characteristics (Tamb = 25C, unless otherwise specified) 10.000 VCE=5V IC - Collector Current ( mA ) 1.000 ICEO- Collector Dark Current, with open Base ( nA ) 1000 10000 VCE=10V IF=0 0.100 100 0.010 10 0.001 0.1 13665 1 1.0 10.0 100.0 96 11875 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) IF - Forward Current ( mA ) Figure 6. Collector Current vs. Forward Current 1.3 Figure 9. Collector Dark Current vs. Ambient Temperature 1.25 I Crel - Relative Collector Current IF=15mA VF - Forward Voltage ( V ) 1.2 1.1 1.0 0.9 0.8 -40 13661 s 1.00 0.75 0.50 0.25 0 -1.5 -20 0 20 40 60 80 100 13658 -1.0 -0.5 0.0 0.5 1.0 1.5 Tamb - Ambient Temperature ( C ) s - Displacement ( mm ) Figure 7. Forward Voltage vs. Ambient Temperature 1.0 0.9 IC - Collector Current ( mA ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 13663 Figure 10. Rel. Collector Current vs. Distance VCE=5V IF=15mA IF=5mA -20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 8. Collector Current vs. Ambient Temperature Rev. A1, 23-Sep-98 5 (9) TCPT1200X01 Dimensions in mm 12899 weight: ca. 0.15 g 6 (9) Rev. A1, 23-Sep-98 TCPT1200X01 Reel Dimensions 13722 Rev. A1, 23-Sep-98 7 (9) TCPT1200X01 Tape Dimensions 13721 8 (9) Rev. A1, 23-Sep-98 TCPT1200X01 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1, 23-Sep-98 9 (9) |
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