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| SHINDENGEN Darlington Transistor 2SB1282 (TP4J10) *} 4A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings nit U Storage TemperatureTstg -55*+150 *Z Junction TemperatureTj +150 *Z Collector to Base Voltage V -100 V CBO Collector to Emitter Voltage V -100 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DCI -+4 A C Collector Current Peak I -+6 A CP Base Current DC I -0.3 A B Base Current Peak I -0.5 A BP Total Transistor Dissipation = 25*Z P Tc 25 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings nit U Collector Cutoff Current V = -100V I Max -0.1 A m CBO CB I Max -0.1 CE CEO V = -100V Emitter Cutoff Current I V = -7V Max -5mA EBO EB DC Current Gain h = Min 1,500 CE C -1A FE V = -3V, I Max 15,000 Collector to Emitter V (sat)I = -1A Saturation Voltage Max -1.5 V CE C Base to Emitter Saturation Voltage V (sat)I = -2mA Max -2.0 V B Thermal Resistance BE Junction to case Max 5.0 AEjc *Z/W Transition Frequency fT V = 10V, -0.4A = TYP 20 Hz M CE C I Turn on Time ton Max 1 I = -1A C Storage Time = ts I =B2 -2mA Max 4 Es B1 I R= 25 L Fall Time tf V = -4V Max 2 BB2 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SB1282 hFE - I C VCE = -3V 10000 50C 100C 1000 Tc = 150C DC Current Gain hFE 100 25C 0C -25C -55C 10 -0.01 -0.1 -1 -6 Collector Current IC [A] 2SB1282 Saturation Voltage -3 -2A -3A -4A -6A -2.5 -6A -4A -3A -2A -1.5 -2 -3 -1A IC = -0.5A -2.5 -2 -1.5 -1A -0.5A -1 Collector-Emitter Voltage VCE [V] -0.5 -0.5 Tc = 25C 0 -0.001 -0.01 -0.1 -0.5 0 -0.0001 Base Current IB [A] Base-Emitter Voltage VBE [V] -1 2SB1282 Switching Time - IC ts 1 Switching Time tSW [s] tf ton IB1 = 0.002IC IB2 = 0.002IC VBB2 = -4V VCC = -25V Tc = 25C 0.1 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 Collector Current IC [A] 2SB1282 10 Switching Time - Tc ts Switching Time tSW [s] 1 tf ton IC = -1A IB1 = -2mA IB2 = -2mA VBB2 = -4V R L = 25 0.1 0 50 100 150 Case Temperature Tc [C] 2SB1282 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SB1282 -6 10ms DC PT limit Forward Bias SOA 1ms 150s -1 Collector Current IC [A] IS/B limit -0.1 Tc = 25C Single Pulse -0.01 -1 -10 -100 Collector-Emitter Voltage VCE [V] 2SB1282 100 Collector Current Derating Collector Current Derating [%] 80 60 IS/B limit 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SB1282 -10 Reverse Bias SOA -8 Collector Current IC [A] -6 -4 -2 IB1 = -0.005I C IB2 = -40mA VBB2 = -5V Tc < 150C 0 0 -20 -40 -60 -80 -100 -120 -140 Collector-Emitter Voltage VCE [V] |
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