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7MBR15SA120
IGBT MODULE (S series) 1200V / 15A / PIM
IGBT Modules
Features
* Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit
Applications
* Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP -IC PC VCES VGES IC ICP Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rat ing 1200 20 25 15 50 30 15 110 1200 20 25 15 50 30 110 1200 1600 15 155 120 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s C C V N*m
Continuous
Tc=25C Tc=80C Tc=25C Tc=80C
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake
1 device
Continuous 1ms 1 device
Tc=25C Tc=80C Tc=25C Tc=80C
Converter
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=15mA VGE=15V, Ic=15A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=15A VGE=15V RG=82 IF=15A chip terminal Min.
7MBR15SA120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 1800 0.35 0.25 0.1 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 V 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
IF=15A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=15V RG=82 VR=1200V IF=15A chip terminal VR=1600V T=25C T=100C T=25/50C
2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375
Converter
mA V mA K
Thermistor
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 1.14 1.85 1.14 1.30 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter] 21(P) [B ra k e ] 2 2 (P 1 ) [In v er ter ]
[T h e rm is to r]
8
2 0 (G u) 1 8 (G v) 1 6 (G w )
9
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage
35
7MBR15SA120
[ Inverter ] Collector current vs. Collector-Emitter voltage
35
Tj= 25 C (typ.)
15V VGE= 20V 12V
o
Tj= 125 C (typ.)
15V VGE= 20V 12V
o
30
30
25 Collector current : Ic [ A ] Collector current : Ic [ A ]
25
20 10V 15
20
10V
15
10
10
5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
35 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 30
o
Tj= 125 C 8
o
25 Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
6
20
15
4 Ic= 30A 2 Ic= 15A Ic= 7.5A
10
5
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C
5000 1000
o
[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25 C
25
o
800 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
600
15
500
400
10
Coes 100 Cres
200
5
50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 50 100 Gate charge : Qg [ nC ]
0 150
IGBT Modules
7MBR15SA120
[ Inverter ] Switching time vs. Collector current (typ.)
1000
[ Inverter ] Switching time vs. Collector current (typ.)
1000
Vcc=600V, VGE=15V, Rg=82, Tj=25C
Vcc=600V, VGE=15V, Rg=82, Tj=125C
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton tr
ton
tr
tf 100
100 tf
50 0 5 10 15 20 25 Collector current : Ic [ A ]
50 0 5 10 15 20 25 Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.)
5000
[ Inverter ] Switching loss vs. Collector current (typ.)
5
Vcc=600V, Ic=15A, VGE=15V, Tj=25C
Vcc=600V, VGE=15V, Rg=82
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
4 Eon(125 C)
o
Switching time : ton, tr, toff, tf [ nsec ]
1000
3 Eon(25 C) 2 Eoff(125 C) Eoff(25 C) 1 Err(125 C)
o o o o o
500 toff
ton
tr 100 tf 50 30 100 Gate resistance : Rg [
]
Err(25 C) 0 1000 0 5 10 15 20 25 30 Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=15V, Tj=125C
12 40
[ Inverter ] Reverse bias safe operating area
+VGE=15V, -VGE<15V, Rg>82, Tj<125C = = =
10 Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon 30 Collector current : Ic [ A ] Eoff Err 30 100 Gate resistance : Rg [
]
8
6
20
4
10
2
0 1000
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR15SA120
[ Inverter ] Forward current vs. Forward on voltage (typ.)
35
o
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=82
300
30
Tj=125 C
o
Tj=25 C
trr(125 C)
o
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
25 Forward current : IF [ A ]
100 trr(25 C)
o
20
50
15
10
Irr(125 C) 10 Irr(25 C)
o
o
5
0 0 1 2 Forward on voltage : VF [ V ] 3 4
5 0 10 Forward current : IF [ A ] 20
[ Converter ] Forward current vs. Forward on voltage (typ.)
35
o o
Tj= 25 C 30
Tj= 125 C
25 Forward current : IF [ A ]
20
15
10
5
0 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
5 200 100 FWD[Inverter] Conv. Diode Thermal resistanse : Rth(j-c) [ C/W ] 1 IGBT [Inverter,Brake] Resistance : R [ k ] 10
[ Thermistor ] Temperature characteristic (typ.)
o
0.1
1
0.01 0.001
0.01
0.1
1
0.1 -60
-40
-20
0
20
40
60
80
o
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [
C]
IGBT Modules
7MBR15SA120
[ Brake ] Collector current vs. Collector-Emitter voltage
35
[ Brake ] Collector current vs. Collector-Emitter voltage
35
Tj= 25 C (typ.)
15V 12V
o
Tj= 125 C (typ.)
15V
o
VGE= 20V 30
VGE= 20V 30
12V
25 Collector current : Ic [ A ] Collector current : Ic [ A ]
25
20 10V 15
20
10V
15
10
10
5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
35
o o
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage
10
Tj= 25 C (typ.)
o
Tj= 25 C 30
Tj= 125 C 8
25 Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
6
20
15
4 Ic= 30A 2 Ic= 15A Ic= 7.5A
10
5
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
5000
o
[ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25
1000
o
C
C
25
800 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
600
15
500
400
10
Coes 100 Cres
200
5
50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 50 100 Gate charge : Qg [ nC ]
0 150
IGBT Modules
Outline Drawings, mm
7MBR15SA120

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