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CHA2063A
7-13GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA2063A is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form or in an hermetic leadless ceramic package.
Main Features
Broad band performance 7-13GHz 2.0dB noise figure, 8-13GHz 19dB gain Low DC power consumption, 40mA 18dBm 3rd order intercept point Chip size : 1,52 x 1,27 x 0.1mm
Pin Out
1 - NC 2 - NC 3 - RF output 4 - NC 5 - Vdd 6 - RF input
Main Characteristics
Tamb = +25C, package form Symbol NF G G Parameter Noise figure, 7-8GHz Noise figure, 8-13GHz Gain Gain flatness 16 Min Typ 2.5 2.0 19 2.0 Max 3.0 2.5 Unit dB dB dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20630096 -05-Apr-00
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2063A
Electrical Characteristics Package form
Tamb = +25C, Vd = +4V Symbol Parameter
7-13GHz Low Noise Amplifier
Test Condi tions
Min
Typ
Max
Unit
Fop G G NF
Operating frequency range Gain Gain flatness Noise figure 7-8 Ghz Noise figure 8-13 GHz
7 16 19 2 2.5 2.0 2.0:1 2.0:1 8 18 40
13
Ghz dB dB
3.0 2.5 2.5:1 2.5:1
dB
VSWRin VSWRout P1dB IP3 Id
Input VSWR Ouput VSWR Output power at 1dB gain compression F=10 GHz 3rd order intercept point Drain bias current
dBm dBm 60 mA
Absolute Maximum Ratings
Tamb = +25C Symbol Vd Pin Top Tstg Parameter Drain bias voltage (3) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 5.0 +15 -40 to +85 -55 to +125 Unit V dBm C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3)See chip biasing option page 9/10
Ref. : DSCHA20630096 -05-Apr-00
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-13GHz Low Noise Amplifier
Electrical Characteristics Chip form
Tamb = +25C, Vd = +4V Symbol Parameter Test Condi tions (1) Min
CHA2063A
Typ
Max
Unit
Fop G G NF
Operating frequency range Gain Gain flatness Noise figure 7-8 Ghz Noise figure 8-12 GHz
7 17 19 2 2.5 2.0
12
Ghz dB dB
3.0 2.5 3.0:1 3.0:1
dB
VSWRin VSWRout P1dB IP3 Id
Input VSWR Ouput VSWR Output power at 1dB gain compression F=10 GHz 3rd order intercept point Drain bias current
(1) (1)
2.0:1 2.0:1 8 18 40
dBm dBm 80 mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and output bonding wires, the indicated parameter values are close to those of the CHA2063A packaged product.
Ref. : DSCHA20630096 -05-Apr-00
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2063A
7-13GHz Low Noise Amplifier
Typical on Wafer Scattering Parameters
Tamb = +25C Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected ) (see chip biasing option page 9/10) Freq GHz 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 S11 dB -0.86 -1.66 -3.56 -7.75 -14.77 -21.16 -19.40 -16.83 -14.68 -12.52 -10.61 -9.31 -8.38 -7.71 -7.26 -6.86 -6.57 -6.34 -6.18 -6.16 -6.25 S11 -91.7 -109.6 -131.8 -153.2 -159.2 -116.9 -79.1 -61.4 -53.7 -52.6 -57.4 -65.5 -74.2 -83.7 -93.4 -103.8 -114.6 -126.4 -139.4 -153.5 -169.0 S12 dB --65.97 -57.28 -50.70 -46.25 -43.76 -42.21 -41.19 -40.39 -39.78 -39.31 -38.85 -38.51 -38.14 -37.74 -37.17 -36.62 -35.91 -35.11 -34.27 -33.41 -32.67 S12 -63.6 -77.7 -105.2 -137.6 -167.7 166.7 145.2 127.8 111.7 96.9 83.9 72.6 62.0 52.8 44.1 35.4 27.3 18.2 8.5 -1.9 -13.3 S21 dB 6.08 11.49 16.03 18.99 20.39 20.79 20.89 20.76 20.45 20.16 19.79 19.36 18.85 18.41 17.94 17.40 16.84 16.26 15.65 15.01 14.35 S21 -175.1 152.4 113.4 69.3 27.7 -9.1 -40.9 -69.6 -95.4 -119.5 -141.8 -162.9 176.6 157.3 138.1 119.5 101.6 83.8 66.5 49.1 31.7 S22 dB -7.99 -9.91 -11.62 -12.74 -14.62 -18.09 -24.49 -34.60 -23.38 -18.53 -15.76 -13.58 -11.92 -10.67 -9.74 -9.01 -8.54 -8.21 -8.05 -8.03 -8.02 S22 -131.3 -139.3 -143.8 -150.7 -164.1 -179.8 160.0 38.5 -9.1 -23.3 -31.8 -40.2 -48.5 -57.1 -65.8 -73.5 -81.7 -88.8 -95.7 -101.7 -106.9
Ref. : DSCHA20630096 -05-Apr-00
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-13GHz Low Noise Amplifier
Typical Results in package
Typical Response (In package Sij ) :
Tamb = +25C Vd = 4.0V ; ; Id = 40mA Gain slope : -0.015dB/C Id slope : -0.025mA/C
25
CHA2063A
5
-40 C 20 4
+80 C Gain (dB) NF (dB) 15 3
25 C 10 2
5
1
0 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz)
0
Typical Gain and Noise Figure measurements in package
0 -5 -10 S11, S22 (dB) -15 -20 -25 -30 -35 S22
+80 C
_40 C S11
_40 C
+80 C
-40 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz)
Typical Matching measurements in package.
Ref. : DSCHA20630096 -05-Apr-00
5/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2063A
7-13GHz Low Noise Amplifier
Typical Output Power measurements in package
Tamb = +25C
20 19 Gain 18 17 Gain (dB)
Vd = 4.0V ; Id = 40mA F=10 GHz
10 8 6 4 Pout 2 0 -2 -4 -6 Pout (dBm)
16 15 14 13 12 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 Pin (dBm) -8 -7 -6 -5
Ref. : DSCHA20630096 -05-Apr-00
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Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-13GHz Low Noise Amplifier
Typical Results in chip
Chip Typical Response ( On wafer Sij ) :
CHA2063A
Tamb = +25C Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected ) (see chip biasing option page 9/10)
25 10
20 S21
8
15 S21 (dB)
6 NF (dB)
10
4
NF 5 2
0 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz)
0
Typical Gain and Noise Figure measurements on wafer.
0 -5 -10 S11, S22 (dB) -15 -20 -25 -30 -35 -40 5 6 7 8 9 10 11 12 13 14 15 Frequency (dB)
S22 S11
Typical Matching measurements on wafer.
Ref. : DSCHA20630096 -05-Apr-00
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2063A
7-13GHz Low Noise Amplifier
Chip schematic and Pad Identification
1520m
G1 GND G2 Vd
2k 1k
2k 1k
55
55
1270m
RFout
RFin
21
21
31
21
21
A
B
C
GND GND D
E
Pad size 100x100m, chip thickness 100m
Dimensions : 1520 x 1270m 35m
Ref. : DSCHA20630096 -05-Apr-00
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-13GHz Low Noise Amplifier
Typical Chip Assembly
Vd C = 100pF
CHA2063A
IN
OUT
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way.
G1 Vd G2
55 2k 2k
55
1k A
21 B
21
31 C
1k E
21 D
21
The two requirements are : N1 : Not exceed Vds = 3.5Volt (internal Drain to Source voltage). N2 : Biased in such a way to limit Vgs positive value (internal Gate to Source voltage). We propose two standard biasing : Low Noise and low consumption :
Vd = 4V and B & D grounded. All the other pads non connected ( NC ). Idd = 40mA & Pout-1dB = +8dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+2.5V ; G2=+2.5V). Low Noise and high output power : Vd = 5V and B & E grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = +13dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+2.5V ; G2=+1.0V).
Ref. : DSCHA20630096 -05-Apr-00
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2063A
Package Outline
7-13GHz Low Noise Amplifier
1.75 max 0.68
3.50
5
2.89
4
u.m.s.
8.38 4.19 AA/SS YXXXX 1 2 6 I
1.72 Typ. 3 O 0.25 Typ.
CHA2063A
Pin 1 index Unit : mm General tolerance : 0.13
Date code Manufacture code
Ordering Information
Chip form : Package form : CHA2063A99F/00 CHA2063AMAF/23
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA20630096 -05-Apr-00
10/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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