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| SMD Ultra Fast Recovery Rectifier COMCHIP www.comchiptech.com CURL101 Thru CURL107 Reverse Voltage: 50 - 1000 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Ultra fast recovery time: 50 - 75 nS Low leakage current DO-213AB (Plastic Melf) 0.022(0.55) Max. 0.205(5.2) 0.195(4.8) Mechanical data Case: DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.116 gram 0.105(2.67) 0.095(2.40) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CURL 101 50 50 35 CURL 102 100 100 70 CURL 103 200 200 140 CURL 104 400 400 280 CURL 105 600 600 420 CURL 106 800 800 560 CURL 107 1000 1000 700 Unit V V V A 30 Io VF Trr IR R 1.0 50 1.0 1.3 1.7 75 5.0 100 60 -55 to +150 -55 to +150 A V nS uA JA C/W C C Tj TSTG Note 1: Thermal resistance from junction to ambient. MDS0210011B Page 1 SMD Ultra Fast Recovery Rectifier COMCHIP www.comchiptech.com Rating and Characteristic Curves (CURL101 Thru CURL107) Fig. 1 - Reverse Characteristics 1000 10 1-1 03 10 CU RL 4 Fig.2 - Forward Characteristics Reverse Current ( uA ) Forward Current ( A ) 100 CU 1.0 RL Tj=125 C 10 1.0 Tj=25 C 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 0 0.001 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 70 30 Fig. 4 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 8.3mS Single Half Sine Wave JEDEC methode Junction Capacitance (pF) 60 50 40 30 CU CU RL 10 =1MHz and applied 4VDC reverse voltage 25 20 15 10 Tj=25 C 5 0 RL 5- 10 20 10 0 0.1 1- 10 10 4 7 1.0 10 100 1000 1 CU 0.1 5 RL 10 10 5- 10 10 7 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210011B Page 2 |
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