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| SHINDENGEN Schottky Rectifiers (SBD) Dual DF25SC6M 60V 25A FEATURES *oe SMT OUTLINE DIMENSIONS Case : STO-220 Unit : mm *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z V RM Maximum Reverse Voltage 60 V Repetitive Peak Surge ReverseV Voltage width 0.5ms, duty 1/40 RRSM Pulse 65 V Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=115*Z IO 25 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 300 Repetitive Peak Surge ReversePRRSM Power Pulse width 10Es, Rating of per diode, Tj= 25*Z 660 W *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit VF I =12.5A, Pulse measurement, Rating of per diode Forward Voltage F Max.0.58 V Reverse Current I R V=V , Pulse measurement, Rating of per diode Max.10 mA R RM Junction Capacitance RV Cj f=1MHz, =10V, Rating of per diode Typ.490 pF Thermal Resistance AEjc junction to case Max.1.6 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF25SC6M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] 1 Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] DF25SC6M Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] DF25SC6M 1000 Reverse Current Tc=150C [MAX] Tc=150C [TYP] 100 Tc=125C [TYP] Reverse Current IR [mA] Tc=100C [TYP] 10 Tc=75C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] DF25SC6M 70 Reverse Power Dissipation DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 60 50 40 0.5 30 20 SIN 0.8 10 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DF25SC6M 25 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 20 SIN 0.3 15 0.1 0.05 10 0.2 0.5 5 0 0 5 10 15 20 25 30 35 40 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T DF25SC6M 50 Derating Curve Average Rectified Forward Current IO [A] 40 DC D=0.8 30 0.5 SIN 0.3 20 0.2 0.1 10 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T DF25SC6M 500 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 400 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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