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HA-5135/883
July 1994
Precision Operational Amplifier
Description
The HA-5135/883 is a precision operational amplifier manufactured using a combination of key technological advancements to provide outstanding input characteristics. A high Beta input stage is combined with laser trimming, dielectric isolation, and matching techniques to produce 75V (max) input offset voltage and 0.4V/oC (max) input offset voltage average drift. Other features enhanced by this process include 9nV/Hz (typ) Input Noise Voltage, 4nA Input Bias Current (max) and 120dB Open Loop Gain (min). These features coupled with 106dB CMRR and 94dB PSRR make HA-5135/883 an ideal device for precision D.C. instrumentation amplifiers. Excellent input characteristics in conjunction with 0.6MHz (min) bandwidth and 0.5V/s (min) slew rate, makes this amplifier extremely useful for precision integrator and biomedical amplifier designs. These amplifiers are also well suited for precision data acquisition and for accurate threshold detector applications.
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Offset Drift . . . . . . . . . . . . . . . . . . . 0.4V/oC (Max) * Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .75V (Max) * High Gain . . . . . . . . . . . . . . . . . . . . 120dB(1MV/V) (Min) * High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 106dB (Min) * High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 94dB (Min) * Low Supply Current. . . . . . . . . . . . . . . . . . 1.7mA (Max) * Low Noise Voltage Density at 1kHz . . . . . 9nV/Hz (Max) * Low Noise Current Density at 1kHz . . . . 0.4pA/Hz (Max)
Applications
* High Gain Instrumentation * Precision Data Acquisition * Precision Integrators * Biomedical Amplifiers * Precision Threshold Detectors
Ordering Information
PART NUMBER HA2-5135/883 HA7-5135/883 HA4-5135/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC -55oC to +125oC PACKAGE 8 Pin Can 8 Lead CerDIP 20 Lead Ceramic LCC
Pinouts
HA-5135/883 (CERDIP) TOP VIEW
NC
HA-5135/883 (CLCC) TOP VIEW
BAL2 BAL1 NC NC
HA-5135/883 (METAL CAN) TOP VIEW
BAL1 8 BAL 2 18 NC V+ NC OUT NC +IN 3 4 V- (CASE) 5 BAL1 -IN 2 + 6 OUT 17 16 1 7 V+
BAL 2 -IN +IN V-
1 2 3 4 +
8 7 6 5
BAL1 V+ OUT BAL1 NC -IN NC +IN NC 4 5 6
3
2
1
20 19
+
7 8 9 NC 10 11 12 13 VNC BAL1 NC
15 14
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
Spec Number
3-139
511016-883 File Number 3731.1
Specifications HA-5135/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W 67oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V VINCM 1/2 (V+ - V-) RL 600
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Input Bias Current IB VCM = 0V, RS = 10k, 50 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN -75 -130 -4 -6 MAX 75 130 4 6 UNITS V V nA nA
PARAMETERS Input Offset Voltage
SYMBOL VIO
CONDITIONS VCM = 0V
+I B + - I B ---------------------------- 2
Input Offset Current IIO VCM = 0V, +RS = 10k, -RS = 10k V+ = +3V, V- = -27V V+ = +27V, V- = -3V VOUT = 0V and +10V, RL = 2k VOUT = 0V and -10V, RL = 2k VCM = +10V, V+ = +5V, V- = -25V, VOUT = -10V VCM = -10V, V+ = +25V, V- = -5V, VOUT = +10V RL = 600 1 2, 3 1 2, 3 1 2, 3 4 5, 6 4 5, 6 1 2, 3 1 2, 3 4 5, 6 -VOUT RL = 600 4 5, 6 Output Current +IOUT -IOUT VOUT = -10V VOUT = +10V 4 4 +25oC +125oC, -55oC -4 -5.5 12 12 120 120 120 120 106 106 106 106 10 10 15 4 5.5 -12 -12 -10 -10 -15 nA nA V V V V kV/V kV/V kV/V kV/V dB dB dB dB V V V V mA mA
Common Mode Range
+CMR
+25oC +125oC, -55oC
-CMR
+25oC +125oC, -55oC
Large Signal Voltage Gain
+AVOL
+25oC +125oC, -55oC
-AVOL
+25oC +125oC, -55oC +25oC +125oC, -55oC
Common Mode Rejection Ratio
+CMRR
-CMRR
+25oC +125oC, -55oC +25oC +125oC, -55oC
Output Voltage Swing
+VOUT
+25oC +125oC, -55oC
+25oC +25oC
Spec Number 3-140
511016-883
Specifications HA-5135/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 -ICC VOUT = 0V, IOUT = 0mA VSUP = 10V, V+ = +5V, V- = -15V, V+ = +15V, V- = -15V VSUP = 10V, V+ = +15V, V- = -5V, V+ = +15V, V- = -15V Note 1 1 2, 3 Power Supply Rejection Ratio +PSRR 1 2, 3 1 2, 3 1 2, 3 -VIOAdj Note 1 1 2, 3 NOTES: 1. Offset adjustment range is [VIO (Measured 1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V. 2. The input stage has series 500 resistors along with back to back diodes. This provides large differential input voltage protection for a slight increase in noise voltage. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN -1.7 -1.7 94 94 94 94 VIO-1 VIO-1 VIO+1 VIO+1 MAX 1.7 1.7 UNITS mA mA mA mA dB dB dB dB mV mV mV mV
PARAMETERS Quiescent Power Supply Current
SYMBOL +ICC
CONDITIONS VOUT = 0V, IOUT = 0mA
+25oC +125oC, -55oC +25oC +125oC, -55oC
-PSRR
Offset Voltage Adjustment
+VIOAdj
+25oC +125oC, -55oC
+25oC +125oC, -55oC
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 2k, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. GROUP A SUBGROUPS 7 7 LIMITS TEMPERATURE +25oC +25oC MIN 0.5 0.5 MAX UNITS V/s V/s
PARAMETERS Slew Rate
SYMBOL +SR -SR
CONDITIONS VOUT = -3V to +3V, VIN S.R. 25V/s VOUT = +3V to -3V, VIN S.R. 25V/s
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Average Offset Voltage Drift Differential Input Resistance Average Offset Current Drift Average Bias Current Drift Input Noise Voltage Density SYMBOL VIOTC RIN IIOTC IBTC EN CONDITIONS VCM = 0V VCM = 0V Versus Temperature VCM = 0V Versus Temperature VCM = 0V RS = 20, fO = 1kHz NOTES 1 1 1 1 1 TEMPERATURE -55oC to +125oC MIN 20 MAX 1.3 40 40 11 UNITS V/oC M pA/oC pA/oC nV/Hz
+25oC -55oC to +125oC -55oC to +125oC +25oC
Spec Number 3-141
511016-883
Specifications HA-5135/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Input Noise Current Density Unity Gain Bandwidth Full Power Bandwidth Minimum Closed Loop Stable Gain Output Resistance Power Consumption NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) SYMBOL IN UGBW FPBW CLSG ROUT PC CONDITIONS RS = 2M, fO = 1kHz VOUT = 100mV, fO at -3dB VPEAK = 10V RL = 2k, CL = 50pF Open Loop VOUT = 0V, IOUT = 0mA NOTES 1 1 1, 2 1 1 1, 3 TEMPERATURE +25oC +25oC +25oC -55oC to +125oC MIN 600 8 +1 MAX 0.4 80 51 UNITS pA/Hz kHz kHz V/V mW
+25oC -55oC to +125oC
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLES 1 AND 2) 1 1 (Note 1), 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7 1
Spec Number 3-142
511016-883
HA-5135/883 Die Characteristics
DIE DIMENSIONS: 72 x 103 x 19 mils 1 mils 1840 x 2620 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 6.0 x 104A/cm2 SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 71 PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5135/883
BAL1
V+
OUT
BAL1
BAL2
-IN
+IN
V-
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 3-143
511016-883

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