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HD1520FX HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION CRT DISPLAYS n STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT Figure 1: Package n n n APPLICATIONS n ISOWATT218FX HORIZONTAL DEFLECTION FOR LARGE AND FLAT SCREEN 100 Hz COLOR TVs Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1: Part Number HD1520FX Marking HD1520FX Package ISOWATT218FX Packaging TUBE Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Vins May 2005 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink o Value 1500 700 10 15 22 8 12 64 2500 Rev. 1 Unit V V V A A A A W V 1/8 HD1520FX Symbol Tstg TJ Storage Temperature Max. Operating Junction Temperature Parameter Value -65 to 150 150 Unit C C Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.95 o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES IEBO Parameter Test Conditions TC = 125 oC Min. Typ. Max. 0.2 2 10 700 Unit mA mA A V Collector Cut-off Current VCE = 1500 V (VBE = 0) V = 1500 V CE Emitter Cut-off Current (IC = 0) VEB = 5 V IC = 100 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VEBO VCE(sat)* VBE(sat)* hFE Emitter-Base Voltage (IC = 0 ) IE = 10 mA IB = 1.8 A IB = 1.8 A VCE = 5 V VCE = 1 V VCE = 5 V fh = 31250 Hz IB(off) = -4.2 A VBE(off) = -2.7 V 10 3 1.3 26 5 5.5 3.2 220 9.5 4 300 V V V Collector-Emitter IC = 9 A Saturation Voltage Base-Emitter Saturation IC = 9 A Voltage DC Current Gain IC = 1 A IC = 9 A IC = 9 A INDUCTIVE LOAD IC = 9 A IB(on) = 1.3 A LBB(on) = 1.9 H VCE(fly) = 1040 V ts tf Storage Time Fall Time s ns * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/8 HD1520FX Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: Output Chatacterisctics Figure 7: Reverse Biased SOA Figure 5: DC Current Gain Figure 8: DC Current Gain 3/8 HD1520FX Figure 9: Collector-Emitter Saturation Voltage Figure 11: Base-Emitter Saturation Voltage Figure 10: Power Losses Figure 12: Inductive Load Switching Time 4/8 HD1520FX Figure 13: Power Losses and Inductive Load Switching Test Circuit Figure 14: Reverse Biased Safe Operating Area Test Circuit 5/8 HD1520FX ISOWATT218FX MECHANICAL DATA DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R DIA mm TYP. inch TYP. MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9.0 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15.00 2.20 4.20 3.80 MIN. 0.209 0.110 0.122 0.071 0.031 0.026 0.071 0.406 0.602 0.354 0.898 1.035 1.701 0.169 0.957 0.575 0.071 0.150 0.134 MAX. 0.224 0.126 0.138 0.087 0.043 0.037 0.087 0.453 0.618 0.402 0.913 1.051 1.748 0.185 0.972 0.591 0.087 0.165 0.150 5.45 0.215 - Weight : 5.6 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m 6/8 HD1520FX Figure 5: Revision History Version 27-May-2005 Release Date 0.1 Initial Release. Change Designator 7/8 HD1520FX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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