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| GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 29 27 5.0 4.2 Anode 2.54 mm spacing 5.9 5.5 0.6 0.4 0.8 0.4 Area not flat Chip position GEX06971 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) o5.1 o4.8 4.0 3.4 Chip position 0.6 0.4 GEX06630 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Stimulierter Emitter mit sehr hohem q q q q Features q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehause Besonders geeignet fur Impulsbetrieb bei hohen Stromen Hohe Zuverlassigkeit Gegurtet lieferbar current q High reliability q Available on tape and reel Anwendungen q Datenubertragung q Fernsteuerungen q Messen, Steuern, Regeln" Applications q Data transfer q Remote controls q For drive and control circuits Semiconductor Group 1 1998-09-18 feo06652 fex06971 1.8 1.2 3.85 3.35 o5.1 o4.8 0.6 0.4 SFH 495 P SFH 4552 Typ Type SFH 495 P Bestellnummer Ordering Code Q62703-Q7891 Gehause Package 5-mm-LED-Gehause (T 1 3/4), plan, schwarz eingefarbt, 2.54-mm-Raster, Kathodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 1 3/4), flat, black colored, spacing 2.54 mm, cathode marking: short lead. 5-mm-LED-Gehause (T 1 3/4), plan, wei diffus eingefarbt, 2.54-mm-Raster, Kathodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 1 3/4), flat, white diffuse colored, spacing 2.54 mm, cathode marking: short lead. SFH 4552 Q62702-P5054 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stostrom, tp = 200 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 200 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax IF = 200 mA Symbol Symbol peak Wert Value 940 Einheit Unit nm Symbol Symbol Wert Value - 40 ... + 85 0 ... + 85 1 1 160 450 Einheit Unit C V A mW K/W Tstg Top VR IFSM Ptot RthJA 4 nm Semiconductor Group 2 1998-09-18 SFH 495 P SFH 4552 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Abstrahlwinkel Half angle SFH 495 P SFH 4552 Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 200 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to10 %, IF = 200 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 1 A, tp = 100 s Schwellenstrom1) Threshold current 1) Gesamtstrahlungsflu Total radiant flux IF = 1 A, tp = 10 s Strahlstarke Radiant intensity IF = 1 A, tp = 10 s SFH 495 P SFH 4552 1) Symbol Symbol Wert Value Einheit Unit Grad deg. 30 50 tr, tf 7 ns Co 90 pF VF Ith e 2.1 < 150 700 V mA mW Ie mW/sr 400 200 Remark: This IRED works efficiently at forward currents higher than Ith. Warning: This data sheet refers to high power infrared emitting semiconductors. Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1. When operating powerful emitters, care should be taken to comply with IEC 825.1 to minimize any possible eye hazard: - Use lowest possible drive level - Use diffusing optics where possible - Avoid staring into powerful emitters or connected fibers Semiconductor Group 3 1998-09-18 SFH 495 P SFH 4552 Radiant intensity Ie = f (IF) 160 % 140 120 OHF00328 Forward current IF = f (VF) 2.0 A 1.8 1.6 1.4 OHF00329 e F 100 80 60 40 1.2 1.0 0.8 0.6 0.4 20 0 0.2 0 0.4 0.8 1.2 1.6 A 2.0 F 0 1.4 1.6 1.8 2.0 2.2 V 2.4 VF Radiation characteristics SFH 495 P Irel = f () 40 30 20 10 0 1.0 OHF00330 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation characteristics SFH 4552 Irel = f () 40 30 20 10 0 1.0 OHF00441 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1998-09-18 |
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