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| SI5504DC Vishay Siliconix Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.085 @ VGS = 10 V 0.143 @ VGS = 4.5 V 0.165 @ VGS = -10 V ID (A) "3.9 "3.0 "2.8 "2.1 D1 S2 P-Channel -30 0.290 @ VGS = -4.5 V 1206-8 ChipFET 1 S1 D1 D1 D2 D2 G1 S2 G2 G2 G1 Marking Code EA XX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Part # Code Ordering Information: SI5504DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State -30 "20 V "2.8 "2.0 "10 -1.8 2.1 1.1 -55 to 150 260 "2.1 "1.5 -0.9 1.1 0.6 W _C _ A Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 30 Unit "3.9 "2.8 1.8 2.1 1.1 "2.9 "2.1 0.9 1.1 0.6 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Symbol Typical 50 90 30 Maximum 60 110 40 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71056 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-1 SI5504DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V " VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C VDS = -24 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 10 V ID(on) VDS p -5 V, VGS = -10 V VGS = 10 V, ID = 2.9 A Drain-Source On-State Resistancea VGS = -10 V, ID = -2.1 A rDS(on) VGS = 4.5 V, ID = 2.2 A VGS = -4.5 V, ID = -1.6 A Forward Transconductancea VDS = 15 V, ID = 2.9 A gfs VDS = -15 V, ID = -2.1 A IS = 0.9 A, VGS = 0 V VSD IS = -0.9 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -10 0.072 0.137 0.120 0.240 6 3 0.8 -0.8 1.2 -1.2 V S 0.085 0.165 0.143 0.290 W A 1.0 V -1.0 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 10 V, ID = 2.9 A Gate-Source Charge Qgs P-Channel VDS = -15 V, VGS = -10 V, ID = -2.1 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 0.9 A, di/dt = 100 A/ms trr IF = -0.9 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 5 5.5 0.8 nC 1.2 1.0 0.9 7 8 12 11 12 14 7 8 40 40 11 12 18 18 18 21 11 12 80 80 ns 7.5 6.6 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71056 S-21251--Rev. B, 05-Aug-02 SI5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 N-CHANNEL Transfer Characteristics 6 4V 6 4 4 TC = -125_C 2 25_C -55 _C 2 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 400 Capacitance r DS(on)- On-Resistance ( W ) Ciss C - Capacitance (pF) 0.15 VGS = 4.5 V 0.10 300 VGS = 10 V 200 0.05 100 Coss 0.00 0 2 4 6 8 10 0 0 Crss 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 1.8 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on)- On-Resistance ( W ) (Normalized) 8 VDS = 15 V ID = 2.9 A 1.6 VGS = 10 V ID = 2.9 A 1.4 6 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71056 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-3 SI5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.20 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.15 ID = 2.9 A 0.10 TJ = 150_C 0.05 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 40 50 Single Pulse Power 0.2 V GS(th) Variance (V) -0.0 Power (W) 30 -0.2 20 -0.4 10 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 0 10- 4 10- 3 10- 2 10- 1 Time (sec) 1 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 71056 S-21251--Rev. B, 05-Aug-02 SI5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 7 V 8 I D - Drain Current (A) 6V 10 P-CHANNEL Transfer Characteristics TC = -55_C 5V I D - Drain Current (A) 8 25_C 6 125_C 4 6 4 4V 2 3V 0 0.0 2 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 VGS = 4.5 V r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 0.3 400 Capacitance 320 Ciss 240 0.2 VGS = 10 V 160 Coss 80 Crss 0.1 0.0 0 2 4 6 8 10 0 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 71056 S-21251--Rev. B, 05-Aug-02 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 SI5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 VDS = 15 V ID = 2.1 A r DS(on)- On-Resistance ( W ) (Normalized) 8 1.4 P-CHANNEL 1.6 Gate Charge On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.1 A V GS - Gate-to-Source Voltage (V) 6 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.4 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.3 ID = 2.1 A 0.2 TJ = 150_C TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) 40 ID = 250 mA 0.0 Power (W) 0.2 30 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 4 10- 3 10- 2 10- 1 Time (sec) 1 10 100 600 TJ - Temperature (_C) www.vishay.com 2-6 Document Number: 71056 S-21251--Rev. B, 05-Aug-02 SI5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance P-CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71056 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-7 |
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