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SMA661AS
GPS HIGH GAIN LNA ICs
PRELIMINARY DATA
GENERAL FEATURES LOW NOISE FIGURE 1.4 dB @ 1.575 GHz HIGH GAIN 17 dB @ 1.575 GHz POWER DOWN FUNCTION TEMPERATURE COMPENSATED UNCONDITIONALLY STABLE INTEGRATED OUTPUT MATCHING ESD PROTECTION ( 2kV HBM) 70 GHz Silicon Germanium TECHNOLOGY LEAD-FREE STRAIGHT PACKAGE (SOT666) APPLICATIONS GPS DESCRIPTION SMA661AS is a product of the SMA Family (Silicon MMIC Amplifiers), it uses ST state-of-the art SiGe BiCMOS technology. The excellent RF performances (17dB Gain and 1.4dB NF at 1.575GHz) and the few external component counts (just one capacitor) make the SMA661AS an ideal solution for GPS Low Noise Amplifier. SMA661AS embeds a power down function avoiding to use an external switch; in power down mode (VPD VPDL ) the current consumption is about 10 nA. It is housed in ultra miniature SOT666 plastic package (1.65mm x 1.2mm x 1.57mm). Table 2. Order Codes
Package SOT666
Figure 1. Package
SOT666 (Lead-Free) 1.65 x 1.2 x 0.57 mm 1
6
Top View
2 5 4
3
Table 1. Pin Connection
Pin No. 1 2 3 4 5 6 Pin Name RF IN GND PD RF OUT GND Vcc
Tape and Reel SMA661ASTR
Figure 2. Circuit Schematic
VCC (6)
C1 RF input 33nF
RF IN (1) SMA661AS PD (3) GND (2,5)
RF OUT(4) RF Output
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Table 3. Absolute Maximum Ratings
Symbol Vcc Tstg Ta VESD VESD Supply voltage Storage temperature Operating ambient temperature Electrostatic Discharge Electrostatic Discharge HBM (ALL PINs) MM (ALL PINs) Parameter Conditions Value 3.3 -60 to +150 -40 to +85 Unit V
o
C
oC
2000 200
V V
ELECTRICAL CHARACTERISTICS (Ta = +25 oC, Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Table 4. Electrical Characteristics
Symbol f Vcc Icc IPD Gp NF IIP2 IIP3 ISL RLin RLout VPDL(1) VPDH(2) Parameters Frequency Supply voltage Current Consumption Power Down Mode Current Consumption Power gain Noise figure Input IP2 Input IP3 Reverse Isolation Input Return Loss Output Return Loss Power Down Low State Power Down High State Stability
Note: (1) The device is switched to OFF state (2) The device is switched to ON state
Test Conditions
Min.
Typ. 1575
Max.
Unit MHz
2.53
2.7 8.5
2.87
V mA nA dB dB dBm dBm dB dB dB
VPD VPDL
10 17 1.4
f1 = 849 MHz, f2 = 2424 MHz, Pin = -30 dBm f1 = 1574.5 MHz, f2 = 1575.5 MHz, Pin = -30 dBm
0.5 3 -28
f = 1500-1650 MHz f = 1500-1650 MHz
10 10 0.5 1.0
V V
100 - 10000 MHz
Unconditionally stable
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TYPICAL PERFORMANCE (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Figure 3. Power Gain Vs Frequency
22 21 20 19 18 Gp (dB) Ta = -40 C Ta = +25 C
Figure 6. Reverse Isolation Vs Frequency
-20 -22 -24 -26 ISL (dB) -28 -30 -32 -34 -36 -38 -40 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) Ta = +85 C Ta = +25 C Ta = -40 C
17 16 15 14 13 12 11 10 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) Ta = +85 C
Figure 4. Input Return Loss Vs Frequency
0 -2 -4 -6 -8 IRL (dB) -10 -12 -14 -16 -18 -20 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) Ta = +85 C Ta = -40 C Ta = +25 C
Figure 7. Output Return Loss Vs Frequency
0 -2 -4 -6 ORL (dB) -8 -10 Ta = -40 C -12 -14 -16 -18 -20 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) Ta = +85 C Ta = +25 C
Figure 5. Noise Figure Vs Frequency
3.0
Figure 8. IIP3 Vs Temperature
5 4.5
2.5
4 3.5
Ta = +85 C
2.0 NF (dB)
1.5
IIP3 (dBm)
1560 1580 1600
3 2.5 2 1.5
Ta = +25 C Ta = -40 C
1.0
0.5
1 0.5
0.0 1500
0
1520 1540 f (MHz)
-40
25 T (C)
85
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TYPICAL PERFORMANCE (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Figure 9. Current Consumption vs Temp.
8.5 8.4
Figure 11. Power Down Current Vs Temp.
60
50
8.3 8.2 8.1 Icc (mA) 8 7.9 7.8 7.7 7.6 7.5 -40 25 T (C) +85
40 Ipd (nA)
30
20
10
0 -40 -15 10 T (C) 35 60 85
Figure 10. Gain Power Down Vs Temperature
-15 -16 -17 -18 Gpd (dB) -19 -20 -21 -22 -23 -24 -25 -40 25 T (C) +85
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TYPICAL PERFORMANCE (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Figure 12. Stability
5
4.5
4
3.5
3
K
2.5
2
1.5
1
0.5
0 0 -K 1 2 3 4 5 f (GHz) 6 7 8 9 10
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Figure 13. Application Board
C1 1uF 1 2
C2 47p
Vcc JP1
J1 RF I N
C3 1 3 3n F C5 4 7p 2 3
U1 RFin GND PD SMA661 SMA661AS Vc c GND R Fout 6 5 4 J2 RF OUT
VPdown C6 1 uF
Table 5. Bill of Material
Component C1 C2 C3 C5 C6 J1 J2 U1 Substrate Value 1uF (electrolytic) 47 pF 33 nF 47 pF 1 uF (electrolytic) Type Case_A 0603 0603 0603 Case_A 142-0711-841 (SMA_Female) 142-0711-841 (SMA_Female) SOT666 FR4 18mm x 20mm x 1.1mm Manufacturer Various Murata (GRM18) Murata (GRM18) Murata (GRM18) Various Johnson Johnson STMicroelectronics Various Function Supply Filter RF Bypass Input dc block / IIP3 improvement RF Bypass Supply Filter RF Input connector RF Output connector SMA661AS GPS LNA Layer = 3 (see Figures 14/15)
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Figure 14. Application Board Layout
20 mm
18 mm
Figure 15. Application Board Cross Section
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PACKAGE MECHANICAL Table 6. SOT666 (Lead-Free) Package
DIM. A A3 D E E1 L1 L2 L3 b b1 e e1 0.20 8o 10o 12o mm. MIN. 0.53 0.13 1.50 1.50 1.10 0.11 0.10 0.05 0.17 0.27 0.50 Bsc TYP 0.57 0.17 1.66 1.65 1.20 0.19 0.23 0.10 0.25 0.34 MAX. 0.60 018 1.70 1.70 1.30 0.26 0.30
Figure 16. SOT666 (Lead-Free) Package Dimensions
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REVISION HISTORY Table 7. Revision History
Date July 2005 October 2005 Revision 1 2 First Issue. Added: Evaluation Board Schematic & Layout Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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