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| (R) STPS120L15TV LOW DROP OR-ing POWER SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n 2 x 60 A 15 V 125 C 0.31 V K2 A2 K1 A1 n n VERY LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK INSULATED PACKAGE: Insulated voltage = 2500 V(RMS) Capacitance = 45 pF AVALANCHE CAPABILITY SPECIFIED K2 A2 K1 A1 DESCRIPTION Dual Schottky rectifier suited for Switched Mode Power Supplies and DC to DC power converters. Packaged in ISOTOPTM, this device is especially intended for use as an OR-ing diode in fault tolerant power supply equipments. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 115C =1 tp = 10 ms Sinusoidal tp = 2s F = 1kHz tp = 1s Tj = 25C Parameter Repetitive peak reverse voltage Value 15 160 60 1200 2 72030 - 65 to + 150 125 10000 Unit V A A A A W C C V/s ISOTOPTM dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) ISOTOP is a trademark of STMicroelectronics July 2003 - Ed :54A 1/4 STPS120L15TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 100C Tj = 25C Tj = 100C VF * Pulse test : Parameter Junction to case Per diode Total Coupling Value 0.45 0.28 0.1 Unit C/W Min. Typ. 450 Max. 22 Unit mA mA A V VR = 5V VR = 12V 0.7 IF = 60 A IF = 60 A 0.27 2.2 0.43 0.31 Forward voltage drop * tp = 380 s, < 2% Tj = 25C Tj = 125C To evaluate the conduction losses use the following equation : P = 0.18 x IF(AV) + 2.2 10-3 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) = 0.1 = 0.05 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature ( =1) (per diode). IF(av)(A) Rth(j-a)=Rth(j-c) 20 18 16 14 12 10 8 6 4 2 0 =1 70 60 50 40 Rth(j-a)=2.5C/W 30 T 20 10 tp T IF(av)(A) 0 10 20 30 40 50 =tp/T =tp/T tp Tamb(C) 50 75 100 125 60 70 0 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 0 10 100 1000 Tj(C) 0 25 50 75 100 125 150 2/4 STPS120L15TV Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values per diode). 1000 900 800 700 600 500 400 300 200 IM 100 0 1E-3 IM(A) Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) =0.5 1.0 0.5 =0.2 Tc=50C =0.1 Tc=75C t 0.2 T Single pulse =0.5 t(s) 1E-2 1E-1 Tc=110C tp(s) 1E+0 =tp/T tp 0.1 1E-3 1E-2 1E-1 1E+0 1E+1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values per diode). IR(mA) Fig. 8: Junction capacitance versus reverse voltage applied (typical values per diode). C(nF) 20 F=1MHz Tj=25C 5E+3 1E+3 Tj=100C 10 5 1E+2 Tj=70C 1E+1 Tj=25C 2 VR(V) 1E+0 0.0 VR(V) 10.0 12.5 15.0 2.5 5.0 7.5 1 1 2 5 10 20 Fig. 9: Forward voltage drop versus forward current (maximum values per diode). 500 100 IFM(A) Tj=100C 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3/4 STPS120L15TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering type STPS120L15TV n n n n Marking STPS120L15TV Package ISOTOP Weight 28g (without screws) Base qty 10 Delivery mode Tube Cooling method: by conduction (C) Recommended torque value : 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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