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| NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Boca Semiconductor Corp. BSC http://www.bocasemi.com Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2221A,22A UNIT V V V mA mW mW/deg C W mW/deg C deg C VCEO 40 Collector -Emitter Voltage VCBO 75 Collector -Base Voltage VEBO 6.0 Emitter -Base Voltage IC 800 Collector Current Continuous PD 500 Power Dissipation @Ta=25 degC 2.28 Derate Above 25deg C PD 1.2 @ Tc=25 degC 6.85 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 10 UNIT V V V nA Emitter-Cut off Current Base-Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=60V, IE=0 ICEX VCE=60V, VEB=3V IEBO VEB=3V, IC=0 IBL VCE=60V, VEB=3V VCE(Sat)* IC=150mA,IB=15mA IC=500mA,IB=50mA VBE(Sat) * IC=150mA,IB=15mA IC=500mA,IB=50mA - 10 10 10 20 0.3 1.0 0.6-1.2 2.0 uA nA nA nA V V V V http://www.bocasemi.com page : 1 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION hFE IC=0.1mA,VCE=10V DC Current Gain IC=1mA,VCE=10V IC=10mA,VCE=10V Ta=55 deg C IC=10mA,VCE=10V IC=150mA,VCE=10V IC=150mA,VCE=1V IC=500mA,VCE=10V DYNAMIC CHARACTERISTICS Small Signal Current Gain Input Impedance Voltage Feedback Ratio Out put Admittance Collector Base Time Constant Real Part Common-Emitter High Frequency Input Impedance Noise Figure hfe hie hre hoe rb'Cc Re(hie) NF ALL f=1kHz IC=1mA, VCE=10V IC=10mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IE=20mA, VCB=20V f=31.8MHz IC=20mA, VCE=20V f=300MHz IC=100uA, VCE=10V Rs=1kohms, f=1kHz 2N2221A to 2N2222A 2221A 2222A >20 >35 >25 >50 >35 >75 UNIT >15 >35 40-120 100-300 >20 >50 >25 >40 30-150 50-300 50-300 75-375 1.0-3.5 2.0-8.0 0.2-1.0 0.25-1.25 <5.0 <8.0 <2.5 <4.0 3.0-15 5.0-35 10-100 25-200 <150 <150 <60 <60 <4.0 kohms x10-4 umhos ps ohms dB DYNAMIC CHARACTERISTICS Transistors Frequency Out-Put Capacitance Input Capacitance ft Cob Cib IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0 f=100kHz VEB=0.5V, IC=0 f=100kHz >250 <8.0 <25 >300 <8.0 <25 MHz pF pF SWITCHING Time Delay time Rise time Storage time Fall time td tr ts tf IC=150mA,IB1=15mA VCC=30V,VBE=0.5V IC=150mA, IB1= IB2=15mA, VCC=30V - <10 <25 <225 <60 ns ns ns ns *Pulse Condition: Pulse Width=300us, Duty Cycle=2% http://www.bocasemi.com page : 2 TO-18 Metal Can Package A B DIM A B C D E F G H J K L MIN MA X 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 -- 0.76 -- 1.27 -- 2.97 0.91 1.17 0.71 1.21 12.70 -- 45 DE G C G 2 K 1 H L J D 3 F 3 2 1 PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR Packing Detail PACKAGE TO-18 STANDARD PACK Details Net Weight/Qty 1K/polybag 350 gm/1K pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 5.0K OUTER CARTON BOX Size Qty Gr Wt 34 kgs 17" x 15" x 13.5" 80.0K http://www.bocasemi.com page : 3 All diminsions in mm. E |
Price & Availability of 2N2222A
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