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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N6849 P-CHANNEL POWER MOSFETs VDSS ID(cont) RDS(on) FEATURES * Single pulse avalanche energy rated * SOA is power dissipation limited * Nanosecond switching speeds * Linear transfer characteristics * High input impedance 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 ) - 100V - 6.5A W 0.30W 1 2 .7 0 (0 .5 0 0 ) m in . 45 TO-39 METAL PACKAGE Underside View Pin 2 = Base Pin 3 = Collector Pin 1 = Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS VDS VDG ID IDM EAS PD TJ , TSTG RqJC RqJA Gate - Source Voltage* Drain - Source Voltage* Drain - Gate Voltage (RGS = 20kW)* Continuous Drain Current @ TC = 25C* @ TC = 100C* Pulsed Drain Current2* Single Pulse Avalanche Current3 Power Dissipation @ TC = 25C* Linear Derating Factor* Operating and Storage Junction Temperature Range* Thermal Resistance Junction to Case* Thermal Resistance Junction to Ambient 20V -100V -100V -6.5A -4.1A -25A 500mJ 25W 0.2W/C -55 to +150C 5C/W 175C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/00 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter BVDSS RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage* Static Drain - Source On-State Resistance 1 Forward Gate - Source Leakage Reverse Gate - Source Leakage Zero Gate Voltage Drain Current* SEME 2N6849 Test Conditions VGS = 0 VGS = -10V VDS = VGS VGS = - 20V VGS = 20V VDS = Max rating x 0.8 VGS = 0V VGS = -10V VDS = -5V VGS = 0V f = 1.0 MHz VGS = -15V ID = - 15A TC = -125C ID = - 6.5A ID = - 4.1A VDS = - 25V VDS ID(on)RDS(on)max. ID = 250mA ID = - 4.1A ID = - 0.25mA Min. -100 Typ. Max. Unit V 0.30* -2 -4 -100 100 -250 -1000 - 2.1 2.5 3.5 500 300 100 25 13 12 30 70 70 70 45 23 22 60 140 140 140 -6.5 D W VGS(th) Gate Threshold Voltage* IGSS IGSS IDSS V nA mA VDS(on) On-State Drain Voltage1 gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton Forward Transconductance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time V (S E ) pF 7.5 VDS = 08v Max Rating nC VDD = - 42V Zo = 50W ID = - 4.1A ns SOURCE - DRAIN DIODE CHARACTERISTICS Continous Source Current* Pulse Source Current |(Body Diode Forward Voltage 1 Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Diode)2 Modified MOSFETSymbol showing the integralreverse P-N Junction rectifier. G S A -25 4 250 1.8 negligible V ns mC VGS = 0 IF = - 6.5A IS = 6.5A TJ = 25C TJ = 25C diF/dt = 100 A/ms -- *JEDEC Registered Value 1 Pulse Test: Pulse Width 300ms, duty cycle 2% 2 Repetitive Rating: Pulse width limited by max. junction temperature 3 VDD = 25V starting Tj = 25.C, L=17.25mH, RG = 25W, Peak IL = 6.5A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/00 |
Price & Availability of 2N6849
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