 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO CEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25C) Symbol VCBO VCEO VEBO hFE * Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -1mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA VCB = 10V, IE = -1mA, f = 200MHz VCB = 10V, IE = -1mA, f = 5MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA, f = 2MHz min 30 20 5 70 typ max 4.10.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 Unit V V V 220 0.1 0.7 V V MHz 4 1.5 50 dB pF VCE(sat) VBE fT NF Cre Zrb 150 300 2.8 *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC -- Ta 500 12 Ta=25C 450 10 IB=100A 12.5 2SC2206 IC -- VCE 15.0 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 8 80A Collector current IC (mA) 18 400 10.0 6 60A 7.5 4 40A 5.0 2 20A 2.5 0 0 6 12 0 0 20 40 60 80 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 120 VCE=10V Ta=25C 100 50 60 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 VCE=10V VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Base current IB (A) 80 40 Ta=75C 30 25C -25C 60 Ta=75C 0.3 25C 0.1 0.03 0.01 0.1 -25C 40 20 20 10 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 - 0.1 - 0.3 fT -- I E 60 VCB=10V 6V Zrb -- IE Reverse transfer impedance Zrb () Ta=25C VCB=10V f=2MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 50 160 Ta=75C 25C 40 120 -25C 80 30 20 40 10 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA) 2 Transistor Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 3.0 f=10.7MHz Ta=25C 2.5 20 24 2SC2206 PG -- IE f=100MHz VCE=10V Ta=25C 12 VCB=6V f=100MHz Rg=50 Ta=25C NF -- IE 10 2.0 IC=3mA 1.5 1mA 16 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 8 12 6 1.0 8 4 0.5 4 2 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 0 - 0.1 - 0.3 -1 -3 -10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 24 0 bre -- gre Reverse transfer susceptance bre (mS) yie=gie+jbie VCE=10V yre=gre+jbre VCE=10V bfe -- gfe Forward transfer susceptance bfe (mS) f=10.7MHz 0 - 0.1mA f=10.7MHz 58 10.7 -1mA 100 Input susceptance bie (mS) 20 -4mA 16 IE=-1mA 10- 0.1 IE=-1mA -20 58 -2mA 100 -7mA 100 -2mA 58 - 0.2 -40 12 - 0.3 58 -60 IE=-4mA 100 58 8 f=10.7MHz 4 - 0.4 100 -80 - 0.5 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 0 0 8 16 24 32 40 - 0.6 - 0.5 -120 - 0.4 - 0.3 - 0.2 - 0.1 0 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe 1.2 yoe=goe+jboe VCE=10V Output susceptance boe (mS) 1.0 0.8 IE=-1mA 100 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3 |
Price & Availability of 2SC2206
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |