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2SK3580-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO Ratings 300 270 12 48 30 12 193 20 5 2.16 35 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
C C *6 kVrms < < < < *1 L=2.32mH, Vcc=48V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS <300V *5 VGS=-30V *6 t=60sec f=60Hz =
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=300V VGS=0V Tch=125C VDS=240V VGS=0V VGS=30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=6A VGS=10V RGS=10 VCC=150V ID=12A VGS=10V L=100H Tch=25C IF=12A VGS=0V Tch=25C IF=12A VGS=0V -di/dt=100A/s Tch=25C
Min.
300 3.5
Typ.
Max.
4.5 25 250 100 0.28
Units
V V A nA S pF
5
10 1.22 10.5 980 1470 170 255 5.5 11 14.5 29 6.5 9.8 28 42 4 6 23 34.5 9.7 14.6 5.6 11.2 12 1.20 0.2 1.80
ns
nC
1.80
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
3.57 58.0
Units
C/W C/W
1
2SK3580-01MR
Characteristics
FUJI POWER MOSFET
50 45 40 35 30 25 20 15 10 5 0
Allowable Power Dissipation PD=f(Tc)
250
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=12A
200
150
EAV [mJ]
0 25 50 75 100 125 150
PD [W]
100
50
0 0 25 50 75 100 125 150
Tc [C]
starting Tch [C]
Typical Output Characteristics
30
Typical Transfer Characteristic
100
10V 8V
ID=f(VDS):80s Pulse test,Tch=25C
20V
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
25
20
7.0V
10
ID [A]
15
6.5V
10
ID[A]
1
6.0V VGS=5.5V
5
0 0 2 4 6 8 10 12
0.1 0 1 2 3 4 5 6 7 8 9 10
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
100
RDS(on)=f(ID):80s Pulse test, Tch=25C
10
0.7
0.6
gfs [S]
0.5
RDS(on) [ ]
0.4
1
0.3
0.2
0.1
0.1 0.1
0.0
1
10
100
ID [A]
2
2SK3580-01MR
FUJI POWER MOSFET
0.7
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V
7.0 6.5
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A
0.6
6.0 5.5
0.5
5.0
RDS(on) [ ]
0.4
max.
VGS(th) [V]
4.5 4.0 3.5 3.0 2.5
max.
0.3
typ.
min.
0.2
2.0 1.5
0.1
1.0 0.5
0.0 -50 -25 0 25 50 75 100 125 150
0.0 -50 -25 0 25 50 75 100 125 150
Tch [C]
Tch [C]
Typical Gate Charge Characteristics
20 18 16
Vcc= 150V
VGS=f(Qg):ID=12A, Tch=25C
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
10
0
14
Ciss
VGS [V]
C [nF]
12 10 8 6
10
-1
Coss
10 4
-2
Crss
2 0 0 10 20 30 40 10
-3
10
-1
10
0
10
1
10
2
10
3
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
100
Typical Switching Characteristics vs. ID
10
3
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=150V, VGS=10V, RG=10
10
10
2
tf
IF [A]
td(off)
t [ns]
td(on)
1
10
1
tr
0.1 0.00
10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3580-01MR
FUJI POWER MOSFET
10
1
Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
10
2
IAV=f(tAV):starting Tch=25C. Vcc=48V
Avalanche current IAV [A]
10
1
Single Pulse
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
4

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