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| AP4409GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -35V 10m -13A ID SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -35 25 -13 -10.3 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 201104041 AP4409GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 24 38 8 20 17 10 67 31 670 480 Max. Units 10 15 -3 -1 -25 100 60 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-13A VGS=-4.5V, ID=-10A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-13A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=25V ID=-13A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 3300 5280 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-2A, VGS=0V IS=-13A, VGS=0V, dI/dt=100A/s Min. - Typ. 43 37 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 125/W when mounted on min. copper pad. AP4409GM 90 90 75 -ID , Drain Current (A) -ID , Drain Current (A) T A = 25 o C 60 - 10V - 7.0V - 5.0V - 4.5V 75 T A = 150 C 60 o -10V -7.0V -5.0V -4.5V 45 45 V G = -3.0 V 30 30 V G = -3.0 V 15 15 0 0 0 2 4 6 0 2 4 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16 1.6 14 I D = -1 0 A T A =25 Normalized R DS(ON) 1.4 I D =-13A V G =-10V RDS(ON\) (m ) 1.2 12 1.0 10 0.8 8 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 12 Normalized -VGS(th) (V) 9 1.4 -IS(A) T j =150 o C 6 T j =25 o C 1.0 3 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4409GM 16 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 12 ID= -13A V DS = -24V C iss C (pF) 8 1000 C oss C rss 4 0 0 15 30 45 60 75 90 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 1ms Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 10ms -ID (A) 1 0.05 100ms 1s 0.1 0.02 PDM 0.01 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W T A =25 C Single Pulse 0.01 0.1 1 10 o DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 V DS =-5V -ID , Drain Current (A) 90 VG T j =25 o C T j =150 o C QG -4.5V QGD 60 QGS 30 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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