 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SML9030-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 10.41 10.67 P-CHANNEL MOS TRANSISTOR VDSS ID(cont) RDS(on) FEATURES * P CHANNEL * REPETITIVE AVALANCHE RATED 0.89 1.14 123 -50V 13.2A W 0.15W 16.38 16.89 13.39 13.64 12.70 19.05 * DYNAMIC dv/dt RATING * FAST SWITCHING * EASE OF PARALLELING * SIMPLE DRIVE REQUIREMENTS 2.54 BSC 2.65 2.75 TO-220 - Metal Package Pin 1 - Gate Pin 2 - Drain Pin 3 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ TSTG RqJC RqJA Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Operating Junction Temperature Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (VGS = -10V , Tcase = 25C) (VGS = -10V , Tcase = 100C) 20V 13.2A 8.3A 53A 45W 0.36W/C -55 to +150C -55 to +150C 2.8C/W 80C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/97 SML9030-220M ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = -1mA VGS = -10V VDS = VGS 1 Min. -50 Typ. Max. Unit V ID = -250mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On Resistance 1 VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS Forward Transconductance Reference to 25C ID = 9.3A ID = -250mA ID = 9.3A VGS = 0 VGS = 0 TJ = 125C -2 3.1 -0.060 0.15 -4 -100 -500 -100 100 900 570 140 39 10 15 18 170 32 96 13.2 53 V / C W V S VDS = -40V VDS = -60V VDS = -48V VGS = -20V VGS = 20V VGS = 0 VDS = -25V f = 1MHz ID = 13.2A VDS = -48V 1 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 1 mA nA pF Gate - Source Charge Turn-On Delay Time Rise Time 1 1 1 nC Gate - Drain ("Miller") Charge VGS = -10V VDD = -30V ID = 13.2A RG = 12W RD = 1.5W Turn-Off Delay Time Fall Time 1 nS SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current (Body Diode) Pulse Source Current 2 (Body Diode) IS = -18A VGS = 0 IF = -18A 1 A V ns Diode Forward Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge TJ = 25C TJ = 25C 120 0.47 4.5 7.5 -6.3 250 1.1 di / dt = 100A/ms mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from 6mm down lead to centre of drain bond pad) Internal Source Inductance (from 6mm down lead to centre of source bond pad) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/97 |
Price & Availability of SML9030220M
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |