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| (R) STPS1150 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS 1A 150 V 175C 0.67 V SMA (JEDEC DO-214AC) STPS1150A DO-41 STPS1150 Negligible switching losses Low forward voltage drop for higher efficiency and extented battery life Low thermal resistance Surface mount miniature package Avalanche capability specified DESCRIPTION 150V Power Schottky rectifier are suited for switch Mode Power Supplies on up to 24V rails and high frequency converters. Packaged in SMA and Axial, this device is intended for use in consumer and computer applications like TV, STB, PC and DVD where low drop forward voltage in required to reduce power dissipation. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM PARM Tstg Tj dV/dt Average forward current SMA Table 2: Order Codes Part Number STPS1150A STPS1150 STPS1150RL Marking 1150 STPS1150 STPS1150 Value 150 15 TL = 160C = 0.5 TL = 150C = 0.5 Half wave, single phase, 50Hz tp = 1s Tj = 25C 1 50 75 1500 -65 to + 150 175 10000 Unit V A A A W C C V/s DO-41 Surge non repetitive forward SMA current DO-41 Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25C) 1 dPt ot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) dTj August 2004 REV. 3 1/6 STPS1150 Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter Lead length = 10 mm SMA DO-41 Value 20 30 Unit C/W Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25C VR = VRRM Reverse leakage current Tj = 125C Tj = 25C VF * Forward voltage drop Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 380 s, < 2% Parameter Min. Typ 0.2 0.2 0.78 0.62 0.85 0.69 Max. 1 1 0.82 0.67 0.89 0.75 Unit A mA IF = 1A IF = 2A V To evaluate the conduction losses use the following equation: P = 0.59 x IF(AV) + 0.08 IF (RMS) 2 Figure 1: Average forward power dissipation versus average forward current PF(AV)(W) 0.9 0.8 0.7 Figure 2: Average forward current versus ambient temperature ( = 0.5) IF(AV)(A) 1.2 = 0.1 = 0.05 = 0.2 = 0.5 Rth(j-a)=Rth(j-I) SMA 1.0 DO-41 0.6 0.5 =1 0.8 Rth(j-a)=120C/W 0.6 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 T 0.2 T IF(AV)(A) =tp/T tp 0.0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) 1.2 1 power 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 2/6 STPS1150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) IM(A) 8 SMA Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-41) IM(A) 8 DO-41 7 6 5 4 3 2 IM 7 6 Ta=25C Ta=25C 5 Ta=75C Ta=75C 4 3 Ta=125C Ta=125C 2 IM 1 0 1.E-03 t =0.5 t(s) 1.E-02 1.E-01 1.E+00 1 0 1.E-03 t =0.5 t(s) 1.E-02 1.E-01 1.E+00 Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA) Zth(j-c)/Rth(j-c) 1.0 SMA Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Zth(j-c)/Rth(j-c) 1.0 DO-41 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse = 0.2 = 0.1 = 0.5 0.9 0.8 0.7 0.6 0.5 0.4 = 0.5 T 0.3 0.2 = 0.2 = 0.1 Single pulse T tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E+03 0.1 0.0 tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E+03 0.0 1.E-02 1.E-01 1.E-02 1.E-01 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) IR(A) 1.E+04 1.E+03 1.E+02 1.E+01 Tj=75C Figure 10: Junction capacitance versus reverse voltage applied (typical values) C(nF) 100 F=1MHz VOSC=30mVRMS Tj=25C Tj=150C Tj=125C Tj=100C 10 1.E+00 1.E-01 Tj=50C Tj=25C 1.E-02 VR(V) 1.E-03 0 25 50 75 100 125 150 1 1 10 VR(V) 100 1000 3/6 STPS1150 Figure 11: Forward voltage drop versus forward current (maximum values, high level) IFM(A) 3.0 Figure 12: Forward voltage drop versus forward current (maximum values, low level) IFM(A) 100 2.5 Tj=125C (maximum values) Tj=125C (maximum values) 2.0 Tj=125C (typical values) 1.5 Tj=125C (typical values) 10 Tj=25C (maximum values) 1.0 Tj=25C (maximum values) 0.5 VFM(V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMA) Rth(j-a)(C/W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 14: Thermal resistance versus lead length (DO-41) Rth(C/W) 120 Rth(j-a) 100 80 60 Rth(j-I) 40 20 S(cm) 0 5 10 Lleads(mm) 15 20 25 4/6 STPS1150 Figure 15: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L Figure 16: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPS1150 Figure 17: DO-41 Package Mechanical Data C A C / OB OD / OD / REF. A B C D Table 6: Ordering Information Ordering type STPS1150A STPS1150 STPS1150RL DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.07 5.20 0.160 0.205 2.04 2.71 0.080 0.107 28 1.102 0.712 0.863 0.028 0.034 Marking 1150 STPS1150 STPS1150 Package SMA DO-41 DO-41 Weight 0.068 g 0.34 g 0.34 g Base qty 5000 2000 5000 Delivery mode Tape & reel Ammopack Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 7: Revision History Date Jul-2003 Aug-2004 Revision 2A 3 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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