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N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.032 MAX Ultra High-Speed Switching SOP-8 Package
Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems
General Description
The XP131A0232SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance: Rds(on)=0.032(Vgs=4.5V) Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs=1.5V) Ultra high-speed switching Operational Voltage: 1.5V High density mounting: SOP-8
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Pin Configuration
S S S G 1 2 3 4 8 7 6 5 D D D D
Pin Assignment
PIN NUMBER 1~3 4 5~8 PIN NAME S G D FUNCTION Source Gate Drain
SOP-8 (TOP VIEW)
Equivalent Circuit
Absolute Maximum Ratings
PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 8 8 25 8 2.5 150 -55~150
Ta=25: UNITS V V A A A W : :
1 2 3 4
N-Channel MOS FET (1 device built-in)
8 7 6 5
Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
Note: When implemented on a glass epoxy PCB
Electrical Characteristics DC characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage
Note: Effective during pulse test.
Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) CONDITIONS Vds=20V, Vgs=0V Vgs=8V, Vds=0V Id=1mA, Vds=10V Id=4A, Vgs=4.5V Id=4A, Vgs=2.5V Id=4A, Vgs=1.5V Id=4A, Vds=10V If=8A, Vgs=0V MIN TYP MAX 10 10 0.5 0.025 0.035 0.055 18 0.85 1.1 0.032 0.045 0.08 UNITS A A V S V
Yfs Vf
Dynamic characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 1200 550 180 MAX
Ta=25: UNITS pF pF pF
u
Switching characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=4A Vdd=10V CONDITIONS MIN TYP 15 15 80 10 MAX Ta=25: UNITS ns ns ns ns
Thermal characteristics
PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C/W
Drain Current vs. Drain /Source Voltage
Pulse Test, Ta=25:
Drain Current vs. Gate/Source Voltage
Pulse Test, Vds=10V
Drain Current:Id (A)
Drain Current:Id (A)
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
Pulse Test, Ta=25:
Drain/Source On-State Resistance vs. Drain Current
Pulse Test, Ta=25:
Drain /Source On-State Resistance :Rds (on) ()
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance :Rds (on) ()
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Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Pulse Test
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Vds=10V, Id=1mA
Ambient Temperature:Topr (:)
Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V)
Drain/Source On-State Resistance :Rds (on) ()
Ambient Temperature:Topr (:)
Drain/Source Voltage vs. Capacitance
Vgs=0V, f=1MHz
Switching Time vs. Drain Current
Vgs=5V, Vdd 10V, PW=10sec. duty 1%
Capacitance:Ciss, Coss, Crss (pF)
Switching Time:t (ns)
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Vds=10V, Id=8A
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test
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Gate/Source Voltage:Vgs (V)
Reverse Drain Current:Id (A)
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=50C/W, (Implemented on a glass epoxy PCB)
Pulse Width:PW (sec)

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