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| FJAF6910 FJAF6910 High Voltage Color Display Horizontal Deflection Output * * * * High Collector-Base Breakdown Voltage : BVCBO = 1700V Low Saturation Voltage : VCE(sat) = 3V (Max.) High Switching Speed : tF(typ.) =0.15s For Color Monitor 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 10 20 60 150 -55 ~ 150 Units V V V A A W C C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25C unless otherwise noted Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33 IB1=1.2A, IB2= - 2.4A 1700 800 6 10 7 10 3 1.5 4 0.3 V V s s Min Typ Max 1 10 1 Units mA A mA V V V * Pulse Test: PW=20s, duty Cycle=1% Pulsed Thermal Characteristics TC=25C unless otherwise noted Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 2.08 Units C/W (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJAF6910 Typical Characteristics 100 10 IB = 2.0A VCE = 5V Ta = 125 C o IC [A], COLLECTOR CURRENT Ta = 25 C o 8 6 IB = 0.6A IB = 0.4A 4 hFE, DC CURRENT GAIN 10 Ta = - 25 C o IB = 0.2A 2 0 0 2 4 6 8 10 12 14 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE Ta = 125 C o 1 o VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB IC = 3 IB 1 Ta = 25 C Ta = 125 C Ta = 25 C 100m o o 100m Ta = - 25 C o Ta = - 25 C o 10m 0.1 1 10 10m 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 16 10 14 VCE = 5V IC [A], COLLECTOR CURRENT VCC = 200V, IC = 6A, IB1 = 1.2A 12 tSTG & tF [s], SWITCHING TIME tSTG 1 10 8 6 tF 0.1 25 C 4 o 125 C 2 o - 25 C o 0 0.0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1 10 VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJAF6910 Typical Characteristics (Continued) 10 10 VCC = 200V, IC = 6A, IB2 = - 2.4A VCC = 200V, IB1 = 1.2A, IB2 = - 2.4A tSTG & tF [s], SWITCHING TIME tSTG & tF [s], SWITCHING TIME tSTG 1 tSTG 1 tF 0.1 0.1 tF 0.01 1 10 0.01 1 10 IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 30 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 25 RB2 = 0, IB1 = 15A VCC = 30V, L = 200H 10 IC (Pulse) t = 100ms IC (DC) t = 10ms t = 1ms 20 15 1 VBE(off) = - 6V 10 0.1 5 V BE(off) = - 3V TC = 25 C Single Pulse 0.01 1 10 100 1000 10000 o 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area 80 PC [W], COLLECTOR POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC [ C], CASE TEMPERATURE Figure 11. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJAF6910 Package Demensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 22.00 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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