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| Power TOPLED(R) Hyper-Bright LED LA E675 Besondere Merkmale * * * * * * * * Gehausebauform: P-LCC-4 Gehausefarbe: wei als optischer Indikator einsetzbar zur Hintergrundbeleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestucktechniken geeignet gegurtet (8 mm-Filmgurt) JEDEC Level 3 nur IR Reflow Loten Features * * * * * * * * P-LCC-4 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly methods available taped on reel (8 mm tape) JEDEC Level 3 IR reflow soldering only Emissionsfarbe Color of Emission Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear 160 200 250 320 400 500 ... ... ... ... ... ... 250 320 400 500 630 800 600 (typ.) 750 (typ.) 900 (typ.) 1200 (typ.) 1500 (typ.) 1800 (typ.) Lichtstarke Lichtstrom Bestellnummer Typ Type Luminous Intensity IF = 50 mA I V (mcd) Luminous Flux IF = 50 mA V (mlm) Ordering Code LA E675 LA E675-S1 LA E675-S2 LA E675-T1 LA E675-T2 LA E675-U1 LA E675-U2 amber Q62703-Q3764 Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 1.6. Luminous intensity ratio in one packaging unit I V max / I V min 1.6. Helligkeitswerte werden bei einer Strompulsdauer von 25 ms spezifiziert. Luminous intensity is specified at a current pulse duration of 25 ms. Semiconductor Group 1 1998-11-05 VPL06837 LA E675 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 12 mm2) mounted on PC board*) (pad size 12 mm2) 1) 1) Symbol Symbol Werte Values - 40 ... + 100 - 40 ... + 100 + 120 70 3 130 Einheit Unit C C C mA V mW Top Tstg Tj IF VR Ptot Rth JA 290 K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. *) PC-board: FR4 Semiconductor Group 2 1998-11-05 LA E675 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 50 mA Dominantwellenlange Dominant wavelength IF = 50 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 50 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung1) Forward voltage1) IF = 50 mA Sperrstrom Reverse current VR = 3 V Temperaturkoeffizient von dom (IF = 50 mA) Temperature coefficient of dom (IF = 50 mA) Temperaturkoeffizient von peak (IF = 50 mA) Temperature coefficient of peak (IF = 50 mA) Temperaturkoeffizient von VF (IF = 50 mA) Temperature coefficient of VF (IF = 50 mA) Temperaturkoeffizient von IV (IF = 50 mA) Temperature coefficient of IV (IF = 50 mA) Symbol Symbol min. Werte Values typ. 624 max. - nm - Einheit Unit peak dom 612 617 623 nm - 18 - nm 2 - - 120 2.1 - 2.55 Grad deg. V VF IR - 0.01 10 A TC TC TCV TCI - - - - 0.05 0.14 - 2.1 - 0.6 - - - - nm/K nm/K mV/K %/K V 1) Durchlaspannungsgruppen Forward voltage groups Durchlaspannung Forward voltage min. max. 2.25 2.55 V V 1.85 2.15 Einheit Unit Gruppe Group 1 2 Semiconductor Group 3 1998-11-05 LA E675 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 50 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve 100 rel % 80 OHL00436 V 60 amber 40 20 0 400 450 500 550 600 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 4 1998-11-05 LA E675 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 mA F 5 OHL00232 Relative Lichtstarke IV/IV(50 mA) = f (IF) Relative luminous intensity TA = 25 C V 10 1 OHL00437 V (50 mA) 10 0 10 1 5 5 10 -1 5 10 0 5 10 -2 5 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 -1 10 5 10 0 5 10 1 F mA 10 2 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 100 OHL00438 F mA 80 60 40 20 0 0 20 40 60 80 C 100 TA Semiconductor Group 5 1998-11-05 LA E675 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 3.0 2.6 2.3 2.1 0.8 0.6 A C 0.1 typ 2.1 1.7 0.9 0.7 (2.4) 3.4 3.0 C C 1.1 0.5 3.7 3.3 package marking A: Anode C: Cathode 0.18 0.12 0.6 0.4 Empfehlung Lotpaddesign Recommended Pad Infrarot/Vapor-Phase Reflow-Lotung Infrared Vapor-Phase Reflow-Soldering 3.3 0.4 2.6 1.1 3.3 0.5 4.2 Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Lotstoplack solder resist Cu Flache / Cu-area = 12 mm 2 per pad 1.85 7.5 Semiconductor Group 6 1998-11-05 OHLP0439 GPL06991 LA E675 Gurtung Taping C C C A Semiconductor Group 7 1998-11-05 OHA00440 |
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