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| Datasheet File OCR Text: |
| NTE5408 thru NTE5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void-free glass-passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200A. These NTE SCRs are reverse-blocking triode thyristors and may be switched from off-state to conduction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +100C), VRRM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off-State Voltage (TC = +100C), VDRXM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +75C, Conduction Angle of 180), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 40A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate-Power Dissipation (IGT IGTM for 3s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Peak Off-State Current Maximum On-State Voltage DC Holding Current DC Gate-Trigger Current DC Gate-Trigger Voltage Gate Controlled Turn-On Time I2t for Fusing Reference Critical Rate of Applied Forward Voltage Symbol IRRM IDRXM VTM IHOLD IGT VGT tgt I2t Test Conditions VRRM = Max, VDRXM = Max, TC = +100C, RGK = 1k IT = 10A (Peak) RGK = 1000 VD = 6VDC, RL = 100 VD = 6VDC, RL = 100 IG x 3GT For SCR Protection Min - - - - - - - - - Typ - - - - - - 1.2 - 5 Max 0.75 0.75 2.2 5 200 0.8 - 2.6 - Unit mA mA V mA A V s A2sec V/s dv/dt RGK = 1k, TC = +100C (critical) .352 (8.95) Dia Max .325 (8.13) Dia Max .250 (6.35) Max .500 (12.7) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793) |
Price & Availability of NTE5408
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