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| SAH03 Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode Equivalent circuit 2 (4k) (100) 1 3 4 Application : Voltage change switch for motor (Ta=25C) SAH03 -10max -3max -60min 2000 to 12000 -1.4max 100typ 30typ 100 min 1.5 max 100 typ sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg SAH03 -60 -60 -6 -1.2 -0.1 1.0(Ta=25C) 150 -40to+150 Unit V V V A A W C C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VR VF trr External Dimensions PS Pack 3 4 0.75 +0.15 -0.05 Conditions VCB=-60V VEB=-6V IC=-10mA VCE=-4V, IC=-1A IC=-1A, IB=-2mA VCE=-12V, IE=0.1A VCB=-10V, f=1MHz IR=100A IF=0.5A IF=100mA Unit 2.540.25 A mA V 2 a b 1 4.320.2 4.8max 0.890.15 1.40.2 6.8max 3.60.2 4.0max V MHz pF V V 8.00.5 6.30.2 0.3 +0.15 -0.05 0~0.1 1.00.3 3.00.2 9.80.3 0.25 ns Weight : Approx 0.23g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) -2.4 -5.0mA -10.0mA -2.0mA -1.2mA Di od e I F - V F Characteristics 1.2 1 -2.4 IC - V BE Temperature Characteristics (Typical) (VCE=-4V) -1 .0 m A -2 Collector Current I C( A) -0 .8 m A - 0 .6 m A A 0.5 Collector Current I C( A) Forward Current I F( A) -2 - 0 .5 m -0 .4m A 0.1 emp mp) e Te (Cas Cas IB=-0. 3mA C C ( -1 0 C 25C 2 5 C 0 0 -1 -2 -3 -4 -5 -6 0.01 0 1 Forward Voltage V F( V) 1.6 0 0 -1 -30C 125 125 (Cas e Te eT 0.05 mp) -1 -1 ) -2 -3 Collector-Emitter Voltage V C E( V) Base-Emittor Voltage V B E( V) ton*tstg*t f - IC Characteristics (Typical) 2 hFE - IC Temperature Characteristics (Typical) (V C E= -4V) 10000 DC Curr ent Gain h FE j-a(C/W) j-a - t Characteristics 300 100 ton*t st g*t f ( s) 1 tf 0.5 t on 1000 500 12 Swit ching Time 25 5C C Transient Thermal Resistance -0.5 -1 -2.4 tstg VCC 30V -IB1=I B2= 2mA 5000 10 -3 0C 100 0.1 -0.2 -0.5 -1 -2.4 50 -0.02 -0.05 -0.1 1 0.3 0.001 0.01 0.1 1 Time t(ms) 10 1 00 1000 Collector Current I C( A) Collector Current I C( A) VCE(sat) - IB Temperature Characteristics (Typical) Collecto r-Emitte r Satu ration Vo lt age V C E( s a t )( V) -3 (I C= -0.5A) Safe Operating Area (Single Pulse) -3 10 0 P c - T a Derating 1.5 125C s 25C -2 -30C Collector Curr ent I C( A) -1 Ma xim um Powe r Dissipat io n P C( W) 1m s 10 ms 1.0 -0.5 -1 0.5 Without Heatsink Natural Cooling -0.1 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125 150 0 -0.1 -0.5 -1 -5 -0.05 -1 -5 -10 -50 -100 Base Current I B( mA) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 163 |
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