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| SI1901DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 3.8 @ VGS = -4.5 V 5.0 @ VGS = -2.5 V ID (mA) -180 -100 SOT-363 SC-70 (6-Leads) Marking Code QD G1 D2 2 3 5 4 G2 S2 XX YY Lot Traceability and Date Code Part # Code S1 1 6 D1 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg Limit -20 "8 -180 -140 -500 0.20 0.13 -55 to 150 Unit V mA A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 625 Unit _C/W Document Number: 71304 S-01886--Rev. A, 28-Aug-00 www.vishay.com 1 SI1901DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = -10 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "8 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55_C VGS v -4.5 V, VDS = -8.0 V VGS v -2.5 V, VDS = -5.0 V VGS = -4.5 V, ID = -180 mA rDS( ) DS(on) gfs VSD VGS = -2.5 V, ID = -400 mA -120 2.6 4.0 200 -0.7 -1.2 3.8 5.0 W mS V -20 -0.4 -24 V -0.9 "2 -0.001 -1.5 "100 -100 -1 mA nA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea -75 mA VDS = -2.5 V, ID = -50 mA IS = -50 mA, VGS = 0 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss MHz VDS = -5.0 V, VGS = 0 V, f = 1 MH 50 V V VDS = -5.0 V, VGS = -4.5 V ID = -100 mA 50V 4 5 V, 100 A 350 25 125 20 14 5 pF F 450 pC C Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = -3.0 V, RL = 100 W 3 0 V, ID = -0.25 A, VGEN = -4.5 V RG = 10 W 0 25 A 4 5 V, 7 25 19 9 12 35 ns 30 15 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71304 S-01886--Rev. A, 28-Aug-00 SI1901DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.2 5V 0.4 4.5 V 0.8 4V 3.5 V 3V 2.5 V 2V 0 0 1 2 3 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 I D - Drain Current (A) 25_C 0.3 125_C 0.2 0.5 TC = -55_C Vishay Siliconix Transfer Characteristics 1.0 I D - Drain Current (A) 0.6 0.4 0.2 0.1 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 Capacitance r DS(on) - On-Resistance ( W ) 36 C - Capacitance (pF) 6 VGS = 2.5 V 4 VGS = 4.5 V 2 27 Ciss 18 Coss 9 Crss 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 6 r DS(on) - On-Resistance (W) (Normalized) 200 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 71304 S-01886--Rev. A, 28-Aug-00 www.vishay.com 3 SI1901DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 TJ = 150_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 6 On-Resistance vs. Gate-to-Source Voltage 5 0.1 4 ID = 180 mA 3 0.01 TJ = 25_C 2 1 0.001 0.00 0.5 01 1.5 0 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA 0.2 V GS(th) Variance (V) 0.1 0.0 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.vishay.com 4 Document Number: 71304 S-01886--Rev. A, 28-Aug-00 |
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