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| TP2314 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 (CE) DESCRIPTION: The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case. MAXIMUM RATINGS I V PDISS TJ T STG JC 1.0 A 18 V 8.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 22 C/W O 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO ICBO BV EBO hFE Cob GPE IC = 10 mA IC = 5.0 mA IC = 5.0 mA VCB = 15 V IE = 1.0 mA VCE = 5.0 V VCB = 15 V TC = 25 OC TEST CONDITIONS MINIMUM 18 36 36 TYPICAL MAXIMUM UNITS V V V A V --- 250 4.0 IC = 250 mA f = 1.0 MHz Pout = 40 W f = 175 MHz 5.0 20 0.1 50 pF W % VCC = 12.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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