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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Zener Voltage : 37V(Typ.) E50A37VBS, E50A37VBR STACK SILICON DIFFUSED DIODE A POLARITY E50A37VBS (+ Type) E50A37VBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Reverse Surge Current (Pulse width=10mS) Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL IF(AV) IFSM IRSM VRSM VRM Tj Tstg RATING 50 300 (60Hz) 50 UNIT A A A G B JD F EI DIM A B C D E F G H I J K MILLIMETERS 11.5 MAX 12.75+0.09-0.00 _ 1.3 + 0.04 _ 4.2+ 0.2 _ 8.0 + 0.2 TYP 0.5 _ 10.0 + 0.2 _ 0.4+ 0.1x45 8.5 MAX 0.2+0.1 _ 28.35+ 0.5 B-PF 34 32 -40 215 -40 215 V V ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Zener Voltage Reverse Current Transient Thermal Resistance Breakdown Voltage Temperature Coefficient Reverse Leakage Current Under High Temperature Temperature Resistance ) TEST CONDITION IFM=100A IZ=10mA VR=32V IFM=100A, IM=100mA, Pw=100mS Irsm=50A, Pw=10mS IZ=10mA Ta=150 , VR=32V DC total junction to case MIN. 34 TYP. 37 27 MAX. 1.10 40 10 60 55 100 0.6 UNIT V V A mV V mV/ A /W VF SYMBOL VZ IR VF Vbr T HIR Rth 2002. 1. 30 Revision No : 1 1/1 |
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