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| HRD0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0070-0100Z (Previous: ADE-208-1614) Rev.1.00 Aug.29.2003 Features * Low reverse voltage drop and suitable for high efficiency reverse current. * Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HRD0103C Laser Mark S6 Package Code SFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode Rev.1.00, Aug.29.2003, page 1 of 5 HRD0103C Absolute Maximum Ratings (Ta = 25C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward surge current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRM * VR IO * 1 1 Value 30 30 100 300 1 125 -55 to +125 Unit V V mA mA A C C IFM IFSM *2 Tj Tstg Electrical Characteristics (Ta = 25C) Item Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 Capacitance Thermal resistance Note: C Rth(j-a) Min -- -- -- -- -- -- Typ -- -- -- -- -- 600 Max 0.4 0.6 0.1 0.2 8.0 -- pF C/W A Unit V Test Condition IF = 10 mA IF = 100 mA VR = 5 V VR = 10 V VR = 0.5 V, f = 1 MHz Polyimide board * 1 1. Polyimide board 20hx15wx0.8t 1.5 3.0 0.8 1.5 Unit: mm 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.1.00, Aug.29.2003, page 2 of 5 HRD0103C Main Characteristics 1.0 Pulse test 10-1 Ta = 75C 10-3 Pulse test 10-4 Reverse current IR (A) Ta = 75C Forward current IF (A) 10-2 10 -5 10-3 Ta = 25C Ta = 50C 10-6 Ta = 25C 10 -4 10-5 10-7 10-6 0 0.2 0.4 0.6 0.8 1.0 10-8 0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 0.12 0.030 0V Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 0.10 0A Reverse power dissipation Pd (W) Forward power dissipation Pd (W) t T t D=-- T D=1/6 sin(=180) D=1/3 D=1/2 DC 0.025 T Tj = 125C t t D=-- T D=5/6 0.08 Tj = 25C 0.020 D=2/3 0.06 0.015 D=1/2 0.04 0.010 sin(=180) 0.02 0.005 0 0 0.05 0.10 0.15 0 0 10 20 30 40 Forward current IF (A) Fig3. Forward power dissipation vs. Forward current Reverse voltage VR (V) Fig4. Reverse power dissipation vs. Reverse voltage Rev.1.00, Aug.29.2003, page 3 of 5 HRD0103C 120 Average rectified current IO (mA) 100 VR=VRRM/2 Tj =125C Rth(j-a)=600C/W DC 80 D=1/2 sin(=180) 60 D=1/3 D=1/6 40 20 0 -25 0 25 50 75 100 125 Ambient temperature Ta (C) Fig.5 Average rectified current vs. Ambient temperature Rev.1.00, Aug.29.2003, page 4 of 5 HRD0103C Package Dimensions As of January, 2003 Unit: mm 1.0 0.10 1.4 0.10 0.13 0.05 0.5 - 0.55 0.3 0.05 0.6 0.05 Package Code JEDEC JEITA Mass (reference value) SFP -- -- 0.0010 g Rev.1.00, Aug.29.2003, page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com (c) 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 0.0 |
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