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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTC3544T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package facilitates miniaturization in end products. High Allowable Power Dissipation. Complementary to KTA1544T. C L G High Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING 30 30 6 2 4 400 0.9 150 -55 ) 150 UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=20V, IE=0 VEB=3V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=1.5A, IB=75mA IC=1.5A, IB=75mA VCE=2V, IC=100mA VCE=10V, IC=50mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =12V 24 MIN. 30 30 6 200 - OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =500mA 2001. 11. 7 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM HN TYP. 180 0.85 150 19 60 MAX. 0.1 0.1 400 1.2 560 MHz pF UNIT A A V V V mV V - 500 - nS - 25 - 1/3 KTC3544T I C - V CE 50m A h FE - I C A 40 mA 2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 A 30m 20m 1K DC CURRENT GAIN h FE 500 300 VCE =2V 10mA 8mA 6mA 4mA 2mA I B =0mA 100 50 30 0.01 0.03 0.1 0.3 1 2 0.2 0.4 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COLLECTOR CURRENT I C (A) IC /I B =10 I C - VBE 2.0 V CE =2V 1.6 1.2 0.8 0.4 0 0.1 0.05 0.03 0.01 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 2 0 0.2 0.4 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) fT - IC TRANSITION FREQUENCY f T (MHz) VCE =10V C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 70 50 30 f=1MHz 1K 500 300 100 50 30 10 0.01 10 1 3 5 10 30 5 0 COLLECTOR-BASE VOLTAGE VCB (V) 0.03 0.1 0.3 1 2 COLLECTOR CURRENT I C (A) 2001. 11. 7 Revision No : 0 2/3 KTC3544T SAFE OPERATING AREA COLLECTOR POWER DISSIPATION PC (W) 10 5 COLLECTOR CURRENT I C (A) 3 I C MAX.(PULSED) 10 0 Pc - Ta 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) I C MAX (CONTINUOUS) DC 10 S* 0 50 S* 1m S* m S* 1 0.5 0.3 OP ER 10 AT 0m S* 0.1 0.05 0.02 0.2 IO N SINGLE NONREPETITIVE * PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) AMBIENT TEMPERATURE Ta ( C) 30 50 0.5 1 3 5 10 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 11. 7 Revision No : 0 3/3 |
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